MOSFET DEVICE HAVING IMPROVED AVALANCHE CAPABILITY

• US 20080191273A1
• Filed: 02/08/2008
• Published: 08/14/2008
• Est. Priority Date: 02/08/2007
• Status: Abandoned Application

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Inventors: Girdhar, Dev Alok, Henson, Timothy
• Application Number:
  US12/028,101
• Publication Number:
  US 20080191273A1
• Time in Patent Office: Days
• US Class Current: 257/331
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A power MOSFET that includes deep source field electrodes, the power MOSFET including one trench that includes an insulated gate and another trench that does not include an insulated gate, both trenches including a source field electrode, a source region adjacent the one trench and no source region adjacent the another trench, and a high conductivity contact region between the two trenches and disposed to divert at least a portion of the avalanche current away from regions under the source region and toward the high conductivity contact region.

Claims

1. A power semiconductor device comprising:

a semiconductor body of one conductivity, and a base region of another conductivity, said semiconductor body including a first surface;

a first trench extending from said first surface through said base region, said trench including at least two opposing sidewalls and a bottom;

a first gate insulation adjacent one of said sidewalls;

a first gate electrode adjacent said first gate insulation and spanning said base region;

a second gate insulation adjacent the other of said sidewalls;

a second gate electrode adjacent said second gate insulation and spanning said base region;

a source field electrode having a first portion and a second portion, said first portion of said source field electrode being disposed between said first and said second gate electrodes, and said second portion of said source field electrode being disposed below said first portion and said gate electrodes;

a source region adjacent each sidewall of said first trench;

a second trench not including a gate electrode spaced from said first trench opposite a source region and extending through said base region, said second trench including an insulation body disposed adjacent the sidewalls and the bottom thereof, and a source field electrode therein adjacent said insulation body;

a high conductivity contact region inside said base region, disposed between said first trench and said second trench; and

a source contact electrically connected to said source field electrodes in said first and said second trenches, said source regions, and said high conductivity contact region, wherein a distance between said high conductivity contact region and said first trench is selected to divert at least a portion of avalanche current to the contact between said source contact and said high conductivity contact region and away from regions under said source region opposite said second trench, and wherein no source region is disposed adjacent said second trench.

2. The device of claim 1, wherein said second trench extends deeper than said first trench.

3. The device of claim 1, further comprising a third trench not including a gate electrode spaced from said first trench opposite a source region and extending through said base region, said third trench including an insulation body disposed adjacent the sidewalls and the bottom thereof, and a source field electrode therein adjacent said insulation body;

and

a high conductivity contact region inside said base region, disposed between said first trench and said third trench, said source contact being electrically connected to said source field electrode in said third trench, said source region, and said high conductivity contact region between said first trench and said third trench, wherein a distance between said high conductivity contact region and said first trench is selected to divert at least a portion of avalanche current to the contact between said source contact and said high conductivity contact region and away from regions under said source region opposite said third trench, and wherein no source region is disposed adjacent said third trench.

4. The device of claim 3, wherein said third trench extends deeper than said first trench.

5. The device of claim 3, wherein said second and third trenches extend deeper than said first trench.

6. The device of claim 1, wherein said source field electrodes are comprised of conductive polysilicon.