SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor structure comprising:
- a first region coupled to a first terminal of the structure;
a second region coupled to a second terminal of the structure;
a third region of a single conductivity type disposed between the first and second regions; and
at least first and second dielectric regions extending a first distance along a depth of the third region, wherein a concentration of doping impurities present in the third region and a distance between the at least first and second dielectric regions define an electrical characteristic of said semiconductor structure, wherein said electrical characteristic is independent of the dielectric regions width, and wherein said first and second regions are of opposite conductivity types.
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Accused Products
Abstract
A semiconductor structure includes a number of semiconductor regions, a pair of dielectric regions and a pair of terminals. The first and second regions of the structure are respectively coupled to the first and second terminals. The third region of the structure is disposed between the first and second regions. The dielectric regions extend into the third region. A concentration of doping impurities present in the third region and a distance between the dielectric regions define an electrical characteristic of the structure. The electrical characteristic of the structure is independent of the width of the dielectric regions width. The first and second regions are of opposite conductivity types. The structure optionally includes a fourth region that extends into the third region, and surrounds a portion of the pair of dielectric regions. The interface region between the dielectric regions and the fourth region includes intentionally introduced charges.
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Citations
71 Claims
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1. A semiconductor structure comprising:
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a first region coupled to a first terminal of the structure; a second region coupled to a second terminal of the structure; a third region of a single conductivity type disposed between the first and second regions; and at least first and second dielectric regions extending a first distance along a depth of the third region, wherein a concentration of doping impurities present in the third region and a distance between the at least first and second dielectric regions define an electrical characteristic of said semiconductor structure, wherein said electrical characteristic is independent of the dielectric regions width, and wherein said first and second regions are of opposite conductivity types. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor structure comprising:
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a first region coupled to a first terminal of the structure; a second region coupled to a second terminal of the structure; a third region disposed between the first and second regions; and at least first and second dielectric regions extending a first distance along a depth of the third region, wherein said first and second regions are of opposite conductivity types, and wherein the at least first and second dielectric regions or an interface region between each of said at least first and second dielectric regions and said third regions includes intentionally introduced charges. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. A semiconductor structure comprising:
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a first region coupled to a first terminal of the structure; a second region coupled to a second terminal of the structure; a third region disposed between the first and second regions; a fourth region extending a first distance along a depth of the third region and having a conductivity type opposite a conductivity type of the third region, said fourth region being adjacent the first and second; and at least first and second dielectric regions extending a second distance along a depth of the third region, wherein said first and second regions are of opposite conductivity types, wherein said fourth region surrounds a portion of the at least first and second dielectric regions, and wherein said at least first and second dielectric regions or an interface region between each of said at least first and second dielectric regions and said fourth regions includes intentionally introduced charges. - View Dependent Claims (50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71)
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Specification