Semiconductor device

• US 20080191332A1
• Filed: 02/06/2008
• Published: 08/14/2008
• Est. Priority Date: 02/09/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 8,816,484 B2
• Time in Patent Office: Days
• US Class Current: 257/679
• CPC Class Codes: G06K 19/07722 the record carrier being multilayered, e.g. laminated sheets flat articles in general, see B32B37/00
• CPC Class Codes: G06K 19/07775 the antenna being on-chip
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 27/0203 Particular design considerations for integrated circuits
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A semiconductor device, in which an integrated circuit portion and an antenna are easily connected, can surely transmit and receive a signal to and from a communication device. The integrated circuit portion is formed of a thin film transistor over a surface of a substrate so that the area occupied by the integrated circuit portion is increased. The antenna is provided over the integrated circuit portion, and the thin film transistor and the antenna are connected. Further, the area over the substrate occupied by the integrated circuit portion is 0.5 to 1 times as large as the area of the surface of the substrate. Thus, the size of the integrated circuit portion can be close to the desired size of the antenna, so that the integrated circuit portion and the antenna are easily connected and the semiconductor device can surely transmit and receive a signal to and from the communication device.

Claims

1. A semiconductor device comprising:

an integrated circuit portion comprising a thin film transistor, and formed over a surface of a substrate; and

an antenna formed over a surface of the integrated circuit portion, and electrically connected to the thin film transistor,

wherein an area of the substrate occupied by the integrated circuit portion is 0.5 to 1 times as large as an area of the surface over the substrate, and

wherein the area of the substrate occupied by the integrated circuit portion is an area of the surface of the integrated circuit portion and a region inside the integrated circuit portion.

4. The semiconductor device according to claim 1, wherein the area over the substrate occupied by the integrated circuit portion is 0.7 to 1 times as large as the area of the surface over the substrate where the integrated circuit portion is provided.

6. The semiconductor device according to claim 1, wherein the area over the substrate occupied by the integrated circuit portion is 0.9 to 1 times as large as the area of the surface over the substrate where the integrated circuit portion is provided.

19. The semiconductor device according to claim 1, further comprising a battery capable of being charged by reception of a wireless signal.

25. The semiconductor device according to claim 1, wherein the integrated circuit portion includes a transmission/reception circuit, a power supply circuit, a memory control circuit, and a memory circuit.

2. A semiconductor device comprising:

a first integrated circuit portion and a second integrated portion formed over a surface of a substrate, and each comprising a thin film transistor; and

an antenna formed over surfaces of the first integrated circuit portion and the second integrated portion, and connected to the thin film transistor,

wherein an area of the substrate occupied by the first integrated circuit portion and the second integrated circuit portion is 0.5 to 1 times as large as an area of the surface of the substrate, and

wherein the area of the substrate occupied by the first integrated circuit portion and the second integrated circuit portion is an area of the surfaces of first and second the integrated circuit portions and a region inside the first and second integrated circuit portions.

8. The semiconductor device according to claim 2, wherein the area over the substrate occupied by the first integrated circuit portion and the second integrated circuit portion is 0.7 to 1 times as large as the area of the surface over the substrate where the first integrated circuit portion and the second integrated circuit portion are provided.

9. The semiconductor device according to claim 2, wherein the area over the substrate occupied by the first integrated circuit portion and the second integrated circuit portion is 0.9 to 1 times as large as the area of the surface over the substrate where the first integrated circuit portion and the second integrated circuit portion are provided.

20. The semiconductor device according to claim 2, further comprising a battery capable of being charged by reception of a wireless signal.

26. The semiconductor device according to claim 2, wherein the integrated circuit portion includes a transmission/reception circuit, a power supply circuit, a memory control circuit, and a memory circuit.

3. A semiconductor device comprising:

an integrated circuit portion formed over a surface of a substrate, and comprising a thin film transistor; and

a first antenna and a second antenna formed over a surface of the integrated circuit portion, and connected to the thin film transistor,

wherein an area of the surface of the integrated circuit portion is 0.5 to 1 times as large as an area of the surface of the substrate, and

wherein the area of the substrate occupied by the integrated circuit portion is an area of the surface of the integrated circuit portion and first and second regions inside the integrated circuit portion.

5. The semiconductor device according to claim 3, wherein the area over the substrate occupied by the integrated circuit portion is 0.7 to 1 times as large as the area of the surface over the substrate where the integrated circuit portion is provided.

7. The semiconductor device according to claim 3, wherein the area over the substrate occupied by the integrated circuit portion is 0.9 to 1 times as large as the area of the surface over the substrate where the integrated circuit portion is provided.

21. The semiconductor device according to claim 3, further comprising a battery capable of being charged by reception of a wireless signal.

27. The semiconductor device according to claim 3, wherein the integrated circuit portion includes a transmission/reception circuit, a power supply circuit, a memory control circuit, and a memory circuit.

10. A semiconductor device comprising:

an integrated circuit portion formed over a surface of a first substrate, and comprising a thin film transistor;

an antenna formed over the integrated circuit portion, and connected to the thin film transistor; and

a booster antenna formed over a surface of a second substrate,

wherein the first substrate overlaps the second substrate, and

wherein an area of the first substrate occupied by the integrated circuit portion is 0.5 to 1 times as large as an area of the surface of the first substrate, and

wherein the area of the first substrate occupied by the integrated circuit portion is an area of the surface of the integrated circuit portion and a region inside the integrated circuit portion.

13. The semiconductor device according to claim 10, wherein the area over the first substrate occupied by the integrated circuit portion is 0.7 to 1 times as large as the area of the surface over the first substrate where the integrated circuit portion is provided.

15. The semiconductor device according to claim 10, wherein the area over the first substrate occupied by the integrated circuit portion is 0.9 to 1 times as large as the area of the surface over the first substrate where the integrated circuit portion is provided.

22. The semiconductor device according to claim 10, further comprising a battery capable of being charged by reception of a wireless signal.

28. The semiconductor device according to claim 10, wherein the integrated circuit portion includes a transmission/reception circuit, a power supply circuit, a memory control circuit, and a memory circuit.

11. A semiconductor device comprising:

a first integrated circuit portion and a second integrated circuit portion formed over a surface of a first substrate, and each comprising a thin film transistor,

an antenna formed over surfaces of the first integrated circuit portion and the second integrated circuit portion, and connected to the thin film transistor; and

a booster antenna formed over a surface of a second substrate,

wherein the first substrate overlaps the second substrate,

wherein an area of the first substrate occupied by the first integrated circuit portion and the second integrated portion is 0.5 to 1 times as large as an area of the surface of the first substrate, and

wherein the area of the first substrate occupied by the first integrated circuit portion and the second integrated portion is an area of the surfaces of the first and second integrated circuit portions and a region inside the first and second integrated circuit portions.

17. The semiconductor device according to claim 11, wherein the area over the first substrate occupied by the first integrated circuit portion and the second integrated circuit portion is 0.7 to 1 times as large as the area of the surface over the first substrate where the first integrated circuit portion and the second integrated circuit portion are provided.

18. The semiconductor device according to claim 11, wherein the area over the first substrate occupied by the first integrated circuit portion and the second integrated circuit portion is 0.9 to 1 times as large as the area of the first surface over the substrate where the first integrated circuit portion and the second integrated circuit portion are provided.

23. The semiconductor device according to claim 11, further comprising a battery capable of being charged by reception of a wireless signal.

29. The semiconductor device according to claim 11, wherein the integrated circuit portion includes a transmission/reception circuit, a power supply circuit, a memory control circuit, and a memory circuit.

12. A semiconductor device comprising:

an integrated circuit portion formed over a surface of a first substrate, and comprising a thin film transistor;

a first antenna and a second antenna formed over a surface of the integrated circuit portion, and each connected to the thin film transistor; and

a booster antenna formed over a surface of a second substrate,

wherein the first substrate overlaps the second substrate,

wherein an area of the first substrate occupied the integrated circuit portion is 0.5 to 1 times as large as an area of the surface of the first substrate, and

wherein the area of the first substrate occupied by the integrated circuit portion is an area of the surface of the integrated circuit portion and a region inside the integrated circuit portion.

14. The semiconductor device according to claim 12, wherein the area over the first substrate occupied by the integrated circuit portion is 0.7 to 1 times as large as the area of the surface over the first substrate where the integrated circuit portion is provided.

16. The semiconductor device according to claim 12, wherein the area over the first substrate occupied by the integrated circuit portion is 0.9 to 1 times as large as the area of the surface over the first substrate where the integrated circuit portion is provided.

24. The semiconductor device according to claim 12, further comprising a battery capable of being charged by reception of a wireless signal.

30. The semiconductor device according to claim 12, wherein the integrated circuit portion includes a transmission/reception circuit, a power supply circuit, a memory control circuit, and a memory circuit.