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HYBRID CIRCUIT HAVING NANOTUBE MEMORY CELLS

  • US 20080192532A1
  • Filed: 02/13/2008
  • Published: 08/14/2008
  • Est. Priority Date: 07/25/2001
  • Status: Active Grant
First Claim
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1. A method of forming a hybrid memory system comprising:

  • providing a substrate;

    providing a nanotube fabric;

    patterning the nanotube fabric;

    providing electrical contacts to the nanotube fabric to form nanotube memory cells; and

    forming semiconductor elements over the nanotube memory cells.

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