Methods for Fabricating Micro-Electro-Mechanical Devices

• US 20080194053A1
• Filed: 05/18/2006
• Published: 08/14/2008
• Est. Priority Date: 05/18/2005
• Status: Active Grant

• Current Assignee: Kolo Medical, Ltd.
• Original Assignee: Kolo Technologies, Inc.
• Inventors: Huang, Yongli
• Granted Patent: US 8,008,105 B2
• Time in Patent Office: Days
• US Class Current: 438/53
• CPC Class Codes: B06B 1/0292 Electrostatic transducers, e.g. electret-type
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 29/49005 Acoustic transducer

Abstract

A method for fabricating a micro-electro-mechanical device (such as a cMUT) is disclosed. The method combines a substrate, a middle spring layer and a top plate using wafer bonding technology or sacrificial technology. A cavity is formed on either the top of the substrate or the bottom of the middle spring layer. A connector is formed on either the top of the middle spring layer or the bottom of the top plate. Upon joining the three layers, the connector defines a transducing space between the top plate and the middle spring layer. The connector is horizontally distanced from the sidewall to define a cantilever anchored at the sidewall. The cantilever and the cavity allow a vertical displacement of the connector, which transports the top wafer in a piston-like motion to change the transducing space. Multiple device elements can be made on the same substrate.

Claims

1. A method for fabricating a micro-electro-mechanical device having a movable mechanical part to transform energy, the method comprising the steps of:

providing a substrate wafer, a middle spring layer and a top plate layer;

forming at least one cavity on either a front side of a substrate wafer or a bottom side of the middle spring layer, wherein each cavity has at least one sidewall;

forming at least one connector of a desired height on either a top side of a middle spring layer or a bottom side of a top plate layer;

forming or effectuating a transducing member on the top plate layer; and

joining the substrate wafer, the middle spring layer and the top plate layer such that the bottom side of the top plate layer faces the top side of the middle spring layer and a bottom side of the middle spring layer faces the front side of the substrate wafer, whereby the connector stands out from the middle spring layer to define a transducing space between the top plate layer and the middle spring layer, and the connector is horizontally distanced from the sidewall by a sufficient length to define a cantilever anchored at the sidewall with an exerting end at the connector, wherein the cantilever and the cavity enable a vertical displacement of the connector to transport the top plate layer substantially vertically with a piston-like motion to change the transducing space and activate the transducing member.

2. The method of claim 1 wherein the cavity is defined by at least two sidewalls and the connector is located between the two sidewalls and horizontally distanced from each of the two sidewalls by a sufficient length to define a bridge having two cantilevers connected head-to-head.

3. The method of claim 1, wherein the step of forming at least one cavity comprises:

forming a first cavity and a second cavity on the front side of the substrate wafer, wherein the first cavity and the second cavity are on two opposite sides of the sidewall to share the sidewall;

and the step of forming at least one connector comprises;

forming a first connector and a second connector of the same desired height, wherein the first connector and the second connector are located on opposite sides of the sidewall, and each horizontally distanced from the sidewall by a sufficient length to define two cantilevers connected back-to-back at the sidewall.

4. The method of claim 1 wherein:

the step of joining the substrate wafer, the middle spring layer and the top plate layer comprises placing the middle spring layer on top of the substrate wafer to cover the first cavity;

the step of forming a connector comprises forming the connector on the top side of the middle spring layer after the middle spring layer has been joined with the substrate wafer; and

the step of joining the substrate wafer, the middle spring layer and the top plate layer further comprises placing the top plate layer over the connector after the middle spring layer with the connector formed thereon has been joined with the substrate wafer.

5. The method of claim 1 wherein the step of forming a connector comprises forming the connector on the bottom side of the top plate layer, and the step of joining the substrate wafer, the middle spring layer and the top plate layer comprises:

placing the middle spring layer over the connector; and

placing the top plate layer and the middle spring layer on top of the substrate wafer to cover the first cavity.

6. The method of claim 1 wherein the step of forming or effectuating the transducing member comprises depositing a metal layer on the top plate layer.

7. The method of claim 1 wherein the micro-electro-mechanical device is a capacitance micromachined ultrasonic transducer (cMUT), the step of forming or effectuating the transducing member on the top plate layer comprises forming or effectuating a top electrode on the top plate layer, and the method further comprises:

forming or effectuating a bottom electrode in or on the middle spring layer or the substrate wafer.

8. The method of claim 7 wherein the step of forming or effectuating the top electrode is accomplished by using a conductive material for the top plate layer.

9. The method of claim 7 wherein the step of forming or effectuating the bottom electrode is accomplished by using a conductive material for the substrate wafer.

10. The method of claim 1 wherein the middle spring layer is an elastic thin membrane and the top plate layer is significantly more rigid than the middle spring layer.

11. The method of claim 1 wherein the step of joining the substrate wafer, the middle spring layer and the top plate layer further comprises the steps of:

bonding an SOI wafer having a support layer carrying a thin layer on the front side of the substrate wafer; and

removing the support layer by a chemical or mechanical method, leaving the thin layer on top of the substrate wafer as the middle spring layer.

12. The method of claim 1 wherein the connector is formed on the bottom side of the top plate layer, and the step of joining the substrate wafer, the middle spring layer and the top plate layer further comprises the steps of:

bonding an SOI wafer having a support layer carrying a thin layer on the bottom side of the top plate layer with the connector formed thereon; and

removing the support layer by a chemical or mechanical method, leaving the thin layer on the bottom side of the top plate layer as the middle spring layer.

13. The method of claim 1 wherein the step of joining the substrate wafer, the middle spring layer and the top plate layer comprises the steps of:

bonding an SOI wafer having a support layer and the top plate layer with the middle spring layer and the substrate wafer; and

removing the support layer by a chemical or mechanical method, leaving the top plate layer remaining joined with the middle spring layer and the substrate wafer.

14. The method of claim 13 further comprising:

before bonding the SOI wafer with the middle spring layer and the substrate wafer, forming an insulation layer over the bottom side of the top plate layer, wherein both the top plate layer and the insulation layer are to remain joined with the middle spring layer and the substrate wafer upon removing the support layer.

15. The method of claim 1 wherein the step of joining the substrate wafer, the middle spring layer and the top plate layer comprises the steps of:

bonding a prime wafer with the middle spring layer and the substrate wafer; and

thinning the prime wafer using a chemical or mechanical method, leaving the prime layer with desired thickness as the top plate layer.

16. The method of claim 1 further comprising:

after joining the top plate layer with the middle spring layer and the substrate wafer, patterning the top plate layer to a desired shape or configuration.

17. The method of claim 16 wherein the step of patterning the top plate layer comprises forming plurality of holes in the top plate layer to create a desired level of hollowness in the top plate layer.

18. The method of claim 1 wherein the step of forming at least one cavity on the substrate wafer comprises forming a plurality of cavities on the substrate wafer, and the step of forming at least one connector comprises forming a plurality of connectors, wherein the connectors are disposed at different locations across the middle spring layer.

19. The method of claim 18 further comprising the following steps before joining the substrate wafer with the middle spring layer and the top plate layer:

introducing an insulation layer on top of the substrate wafer;

introducing a conductive layer over the insulation layer; and

patterning the conductive layer to form a plurality of sections electrically insulated from each other, each section responding to a separate micro-electro-mechanical element, each element having at least one cantilever.

20. The method of claim 18 further comprising forming a separation trench through at least the top plate layer to separate a plurality of micro-electro-mechanical elements from one another, each element having at least one cantilever.

21. The method of claim 20 wherein each element is electrically connected to a connection anchor.

22. The method of claim 21 wherein the connection anchor is separated and unaffected by movement of the cantilevers and the top plate layer.

23. The method of claim 20 wherein the plurality of elements are arranged in an array with minimal separation therebetween, each element being electrically connected to an inter-element connection anchor located at a corner or edge shared by at least two neighboring elements.

24. The method of claim 23, further comprising the steps of:

before forming the separation trench, introducing a conductive layer on top of the top plate layer, wherein the subsequently formed separation trench is through the conductive layer to reach the cavity;

filling the cavity using a filler material; and

depositing a metal layer over the trench to electrically connect two elements on two sides of the trench.

25. The method of claim 24 wherein the filler material is a sacrificial material which can be removed subsequently.

26. The method of claim 24 wherein the filler material is that of a desired property and remains in the cavity.

27. The method of claim 20 further comprising introducing a cover layer over the separation trench to seal the separation trench.

28. The method of claim 27 further comprising depositing a metal layer over the cover layer to interconnect neighboring elements such that the interconnected neighboring elements may be jointly addressed.

29. The method of claim 20 comprising the additional steps of:

forming a sacrificial material from top of the top plate layer to fill the separation trench;

depositing a first sealing layer over the top of the top plate layer to seal the separation trench, the sealing layer having a via to access the sacrificial material;

removing the sacrificial material; and

depositing a second sealing layer to close the via.

30. The method of claim 29 wherein the first sealing layer is a metal layer to interconnect neighboring elements such that the interconnected neighboring elements may be jointly addressed.

31. The method of claim 29 wherein the additional steps are performed after joining the substrate wafer, the middle spring layer and a top plate layer.

32. The method of claim 1, wherein:

the step of forming at least one cavity on the substrate wafer comprises forming a plurality of cavities on the substrate wafer;

the step of forming at least one connector comprises forming a plurality of connectors on the bottom side of the top plate layer, the connectors being disposed at different locations across the middle spring layer when the top plate layer is joined to be middle spring layer; and

the step of joining the substrate wafer, the middle spring layer and the top plate layer comprises the steps of;

bonding a first SOI wafer to the bottom side of the top plate layer, wherein the first SOI wafer has a first support layer supporting the middle spring layer;

removing the support layer in the first SOI wafer but leaving the middle spring layer bonded with the top plate layer; and

joining the substrate wafer having the formed cavity to the middle spring layer on an opposite side to the top plate layer.

33. The method of claim 32, further comprising the steps of:

before joining the substrate wafer, forming a separation trench through the middle spring layer and at least part of the top plate to separate a plurality of micro-electro-mechanical elements from one another, each element having at least one connector to form one cantilever.

34. The method of claim 33, wherein the top plate layer is provided as part of a second SOI wafer having a second support layer, an insulator layer and the top plate layer, the method further comprising the steps of:

after bonding the first SOI wafer to the bottom side of the top plate layer carried by the second SOI wafer, removing the second support layer in the second SOI wafer; and

after forming the separation trench, partially removing the insulator layer and leaving a portion of the insulator layer over an end of the separation trench to have the trench sealed from that end.

35. The method of claim 1 wherein the substrate wafer is a conductive wafer, the method further comprising the following steps to reduce parasitic capacitance of an interconnection pad by increasing thickness of an insulator under the interconnection pad, the steps being performed before joining the substrate wafer to the top plate layer:

forming an insulation cavity on the substrate wafer, the insulation cavity having a desired overall thickness and being located at a position suitable for forming an interconnection pad for a nearby micro-electro-mechanical element of the micro-electro-mechanical device being fabricated;

filling the insulation cavity with a dielectric material to form an embedded insulator having the same thickness of the overall thickness of the patterned cavity; and

forming an electric interconnection pad over top of the embedded insulator.

36. The method of claim 1 wherein the substrate wafer is a conductive wafer, the method further comprising the following steps performed before joining the substrate wafer to the top plate layer to reduce parasitic capacitance of an interconnection pad by increasing thickness of an insulator under the interconnection pad:

forming a patterned cavity on the substrate wafer, the patterned cavity comprising narrow passages interlined with solid lines of unremoved native material of the substrate, and the patterned cavity having a desired overall thickness and being located at a position suitable for forming an interconnection pad for a nearby micro-electro-mechanical element of the micro-electro-mechanical device being fabricated;

oxidizing the solid lines of unremoved native material in the patterned cavity to form an embedded insulator having the same thickness of the overall thickness of the patterned cavity; and

forming an electric interconnection pad over top of the embedded insulator.

37. The method of claim 1 wherein the substrate wafer is a conductive wafer, the method further comprising the following steps to reduce parasitic capacitance of an interconnection pad by increasing thickness of an insulator under the interconnection pad, the steps being performed after joining the substrate wafer to the top plate layer:

forming a patterned cavity on the top plate layer, the patterned cavity comprising narrow passages interlined with solid lines of unremoved native material of the top plate layer, and the patterned cavity having a desired overall thickness and being located at a position suitable for forming an interconnection pad for a nearby micro-electro-mechanical element of the micro-electro-mechanical device being fabricated;

oxidizing the solid lines of unremoved native material in the patterned cavity to form an embedded insulator having the same thickness of the overall thickness of the patterned cavity; and

forming an electric interconnection pad over top of the embedded insulator.

38. The method of claim 1 further comprising forming a post in the cavity, wherein the post is shorter than the sidewall and is cleared of the middle spring layer by a desired distance after the middle spring layer has been placed over the cavity.

39. The method of claim 38 wherein the cavity, the sidewall and the post are formed at the same time using a chemical or mechanical method.

41. The method of claim 1, wherein the step of forming the first cavity on the front side of the substrate wafer comprises forming a first cavity by removing native material from the substrate wafer.

42. The method of claim 1, wherein the step of forming the at least one cavity on the front side of the substrate wafer comprises the steps of:

depositing a sacrificial layer on the front side of the substrate wafer;

patterning the first sacrificial layer to form a first provisional cavity;

depositing a thin film material over the first sacrificial layer to fill the first provisional cavity;

removing the first sacrificial layer to form the first cavity.

43. The method of claim 1, wherein the step of forming at least one cavity comprises forming at least one cavity on the bottom side of the middle spring layer.

44. The method of claim 43 wherein the middle spring layer is a silicon wafer, both the at least one cavity and the at least one sidewall being formed from the middle spring layer.

45. The method of claim 1, further comprising the step of:

forming a pattern on the middle spring layer such that the middle spring layer comprises a first region of a first thickness, a second region of a second thickness, and a third region of a third thickness, the second region being between the first region and the third region, the second thickness being substantially smaller than the first thickness or the third thickness, wherein when joined with the substrate and the top plate layer, the first region forms at least part of the sidewall, the second region and the third region is over the cavity, and the connector is in the third region.

46. The method of claim 45, wherein the step of forming a pattern on the middle spring layer comprises:

forming a patterned oxide or nitride layer over the middle spring layer, the oxide or nitride layer covers the first region and the third region of the middle spring layer but leaves the second region uncovered;

oxidizing the second region of the middle spring layer to form an first oxidized layer;

removing the oxide or nitride layer over the third region and the first oxidized layer in the second region;

oxidizing the second region and the third region of the middle spring layer to form a second oxidized layer; and

removing the oxide or nitride layer over the first region and the second oxidized layer in the second region and the third region.

40. The method of 38 wherein the connector is formed at a location directly above the post.

47. A method for fabricating a micro-electro-mechanical device, such as a capacitance micromachined ultrasonic transducer (cMUT), which has a movable mechanical part to transform energy, the method comprising the steps of:

providing a substrate wafer having a front side and a back side;

depositing a first sacrificial layer on the front side of the substrate wafer;

patterning the first sacrificial layer to form a first provisional cavity;

depositing a first thin film material over the first sacrificial layer to fill the first provisional cavity and to further form a membrane layer covering a top surface of the first sacrificial layer;

removing the first sacrificial layer to form a first cavity on top of the substrate wafer, wherein the first cavity is defined by at least one sidewall having a top surface, the sidewall being made of the first thin film material deposited in the first provisional cavity;

forming at least one connector of a desired height on either a top side of the membrane layer or a bottom side of a top plate layer; and

placing the top plate layer over the connector to define a transducing space between the top plate layer and the membrane layer, wherein the connector stands out from the membrane layer and is horizontally distanced from the sidewall of the first cavity by a sufficient length to define a cantilever anchored at the sidewall to allow a vertical displacement of the connector, and whereby the vertical displacement of the connector transports the top plate layer substantially vertically with a piston-like motion, thus changing the transducing space.

48. The method of claim 47, wherein the step of forming at least one connector comprises the steps of:

depositing a second sacrificial layer on top of the membrane layer;

patterning the second sacrificial layer to form a second provisional cavity;

depositing a second thin film material to fill at least the second provisional cavity;

removing the second sacrificial layer to form a second cavity on top of the membrane layer, wherein the second cavity is defined by at least a connector on top of the membrane layer, the connector being made of the second thin film material deposited in the second provisional cavity.

49. The method of claim 48, wherein the step of removing the first sacrificial layer and the step of removing the second sacrificial layer are performed at the same time.

50. The method of claim 48, wherein the step of depositing a second thin film material over the second sacrificial layer comprises depositing an insulation layer on top of the second sacrificial layer.

51. The method of claim 48 wherein the step of depositing a second thin film material further comprises depositing a second thin film layer over the second sacrificial layer, the second thin film layer having at least one hole for access to the second sacrificial layer underneath.

52. The method of claim 51 wherein the step of depositing the second thin film comprises depositing a porous thin film.

53. The method of claim 51 wherein the at least one hole is formed by etching the second thin film after it has been deposited.

54. The method of claim 51 wherein the second thin film layer is an insulation layer.

55. The method of claim 51 further comprising the step of depositing a thin film metal layer on top of the second thin film layer.

56. The method of claim 47 wherein the micro-electro-mechanical device is a micromachined ultrasonic transducer (MUT), further comprising the step of:

forming an ultrasonic transducing member on at least one of the top plate layer, the membrane layer, and the substrate wafer, wherein the transducing member effectuates energy transformation through vertical transportation of the top plate layer or a change of the transducing space.

57. The method of claim 47 wherein the step of forming the ultrasonic transducing member comprises the steps of:

forming or effectuating a top electrode in or on the top plate layer; and

forming or effectuating a bottom electrode in or on the substrate wafer.

58. The method of claim 47, wherein the membrane layer having at least one hole for access to the first sacrificial layer underneath.

59. The method of claim 58, wherein the at least one hole in the membrane layer is formed by etching the membrane layer after it has been deposited.

60. The method of claim 47 further comprising the step of:

depositing an insulation layer on top of the membrane layer.

61. The method of claim 47 wherein the substrate wafer is in conductive wafer.

62. The method of claim 47 further comprising:

forming a first region of a first thickness, a second region of a second thickness, and a third region of a third thickness on the deposited first thin film material, the second region being between the first region and the third region, the second thickness being substantially smaller than the first thickness or the third thickness, the first region being over the first provisional cavity, the second region and the third region being over the first sacrificial layer.