Method and System for Improving Critical Dimension Uniformity

• US 20080195243A1
• Filed: 02/13/2007
• Published: 08/14/2008
• Est. Priority Date: 02/13/2007
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Liu, Heng-Hsin, Lin, Chun-Hung, Peng, Jui-Chung, Lin, Shy-Jay, Guo, Yao-Wen, Lin, Chien-Hsun
• Granted Patent: US 7,571,021 B2
• Time in Patent Office: Days
• US Class Current: 700/121
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.

Claims

1. A method for improving critical dimension of a substrate, the method comprising:

collecting manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate;

collecting a plurality of sensitivity data corresponding to the plurality of areas; and

calculating a plurality of exposure dosage offsets corresponding to the plurality of areas based on the plurality of critical dimension deviations and the plurality of sensitivity data.

2. The method of claim 1, further comprising:

applying the plurality of exposure dosage offsets to the plurality of areas.

3. The method of claim 1, wherein the plurality of sensitivity data represent critical dimensions sensitivity of the plurality of areas to an etcher.

4. The method of claim 1, wherein the plurality of critical dimension deviations represent deviations between critical dimensions collected from manufacturing equipment and desired critical dimensions.

5. The method of claim 1, wherein the plurality of sensitivity data are expressed as a result of after-development inspection critical dimension (ADI CD) divided by after-etching inspection critical dimension (AEI CD).

6. The method of claim 2, wherein applying the plurality of exposure dosage offsets to the plurality of areas comprises adjusting recipe of manufacturing equipment in a fab facility to apply the plurality of exposure dosage offsets.

7. The method of claim 2, wherein applying the plurality of exposure dosage offsets to the plurality of areas comprises adjusting a process implemented within a fab facility to apply the plurality of exposure dosage offsets.

8. The method of claim 2, wherein applying the plurality of exposure dosage offsets to the plurality of areas comprises applying a process to a product manufactured in a fab facility for applying the plurality of exposure dosage offsets.

9. The method of claim 1, wherein the plurality of areas represent a plurality of fields within the substrate.

20. The method of claim 2, wherein the software tool is operable to apply a process to a product manufactured in a fab facility for applying the plurality of exposure dosage offsets.

10. A method for manufacturing an integrated circuit, the method comprising:

collecting manufacturing data for a plurality of areas on a substrate;

determining a critical dimension sensitivity for each of the plurality of areas; and

identifying an exposure dosage offset for each of the plurality of areas based on the critical dimension sensitivity.

11. The method of claim 10, wherein the manufacturing data comprises a plurality of critical dimension offsets corresponding to the plurality of areas.

12. The method of claim 11, wherein the plurality of critical dimension offsets represents a plurality of deviations between critical dimensions collected from manufacturing equipment and desired critical dimensions.

13. The method of claim 10, wherein determining a critical dimension sensitivity for each of the plurality of areas comprises:

determining an after-development inspection critical dimension (ADI CD);

determining an after-etching inspection critical dimension (AEI CD); and

dividing the after-development inspection critical dimension by the after-etching inspection critical dimension.

14. The method of claim 10, wherein the critical dimension sensitivity represents critical dimension sensitivity of each of the plurality of areas to an etcher.

15. The method of claim 10, further comprising:

implementing an exposure processing to each of the plurality of areas using the exposure dosage offset.

16. A system for improving critical dimension uniformity of a substrate comprising:

a manufacturing execution system for collecting data for a plurality of areas on a substrate; and

a data processing system for calculating a plurality of exposure dosage offsets corresponding to the plurality of areas based on the data; and

a software tool executing in a data processing system of a fab facility for applying the plurality of exposure dosage offset to the plurality of areas.

17. The system of claim 16, wherein the manufacturing execution system is operable to collect a plurality of critical dimension deviations corresponding to the plurality of areas, and a plurality of critical dimension sensitivities corresponding to the plurality of areas.

18. The system of claim 16, wherein the software tool is operable to adjust a process recipe of a manufacturing equipment in a fab facility to apply the plurality of exposure dosage offsets.

19. The system of claim 16, wherein the software tool is operable to adjust a process implemented within a fab facility to apply the plurality of exposure dosage offsets.