Organic Field Effect Transistor Gate

• US 20080197343A1
• Filed: 12/06/2005
• Published: 08/21/2008
• Est. Priority Date: 12/10/2004
• Status: Abandoned Application

• Current Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Original Assignee: PolyIC GmbH & Co. KG (Leonhard KURZ Stiftung & Company KG)
• Inventors: Fix, Walter, Ficker, Jurgen, Blache, Robert
• Application Number:
  US11/721,244
• Publication Number:
  US 20080197343A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 19/10 comprising field-effect transistors
• CPC Class Codes: H10K 19/20 comprising components having an active region that includes an inorganic semiconductor

Abstract

An electronic device, in particular an RFID transponder, comprises at least one logic gate, in which the logic gate is formed from a plurality of layers, which are applied on a common substrate, which layers comprise at least two electrode layers and at least one of the layers, in particular an organic layer, forms a semiconductor layer which is applied as a liquid, and an insulator layer and wherein the logic gate comprises at least two differently constructed field effect transistors. The field effect transistors are formed from a plurality of functional layers applied to a carrier substrate by printing or blade coating.

Claims

1. An electronic device comprising:

at least one logic gate comprising a plurality of layers on a common substrate;

the logic gate comprising at least two electrode layers and at least one organic semiconductor layer; and

an insulator layer;

the insulator layer, the at least two electrode layers and the at least one organic semiconductor layer comprising at least two differently constructed field effect transistors arranged to form at least one of the following constructions;

a) the at least two different field effect transistors include corresponding different semiconductor layers which comprise respective different semiconductor material;

or

b) the at least two different field effect transistors comprise respective corresponding insulator layers with different respective insulator materials;

or

c) the at least two different field effect transistors have respective corresponding electrode layers which comprise different respective electrode materials.

2. The electronic device as claimed in claim 1 wherein the logic gate forms the one construction comprising the at least two differently constructed field effect transistors which include corresponding two different semiconductor material layers which differ in respective thicknesses.

3. The electronic device as claimed in claim 1 wherein the logic gate forms the one construction comprising the at least two differently constructed field effect transistors which comprise respective different semiconductor material layers which differ in respective conductivity.

4. The electronic device as claimed in claim 1 wherein the logic gate forms the one construction comprising the at least two differently constructed field effect transistors in that the at least two different field effect transistors have respective corresponding different respective insulator layers with respective different thicknesses.

5. The electronic device as claimed in claim 1 wherein the logic gate forms the one construction comprising the at least two differently constructed field effect transistors in that the at least two different field effect transistors have respective corresponding insulator layers of different respective permeability.

6. The electronic device as claimed in claim 1 wherein the logic gate is arranged to form the one construction comprising the at least two differently constructed field effect transistors in that the at least two different field effect transistors are formed with differently areally structured layers.

7. The electronic device as claimed in claim 6 wherein the structured layers are formed as strips with different lengths and/or different widths.

8. The electronic device as claimed in claim 1 wherein the at least two different field effect transistors are alongside one another.

9. The electronic device as claimed in claim 1 wherein the at least two different field effect transistors are one above another.

10. The electronic device as claimed in one of claims 8 or 9 wherein the at least two different field effect transistors are in an identical orientation.

11. The electronic device as claimed in claim 10 wherein the at least two different field effect transistors are in a bottom-gate or in a top-gate orientation.

12. The electronic device as claimed in claim one of claims 8 or 9 wherein the at least two different field effect transistors are with different orientations.

13. The electronic device as claimed in claim 1 wherein the at least two different field effect transistors each have a profile of internal resistance and/or switching behavior and wherein the at least two different field effect transistors each have a different profile of its internal resistance and/or a different switching behavior.

14. The electronic device as claimed in claim 1 wherein the at least two field effect transistors are connected to one another in parallel and/or series with each other.

15. The electronic device as claimed in claim 14 wherein the electrical connection between the at least two field effect transistors is one of direct electrical conductive and/or capacitive coupling to and between electrodes of the field effect transistors.

16. The electronic device as claimed in claim 14 wherein the at least two different field effect transistors have are formed with a common gate electrode.

17. The electronic device as claimed in claim 1 wherein the at least two different field effect transistors respectively comprise semiconductor material of complementary conduction types, a the first field effect transistor being formed with a p-conducting semiconductor layer and a second field effect transistor being formed with an n-conducting semiconductor layer, or vice versa.

18. The electronic device as claimed in claim 1 wherein at least two different field effect transistors have directly adjoning semiconductor layers, the directly adjoining semiconductor layers of the at least two different field effect transistors exhibiting a zone with a p/n junction.

19. The electronic device as claimed in claim 1 wherein the at least two different field effect transistors are spatially arranged on a substrate for production via layer-by-layer printing and/or blade coating.

20. The electronic device as claimed in claim 1 wherein the layers of the at least two different field effect transistors comprise printable semiconducting polymers and/or printable insulating polymers and/or conductive printing inks and/or metallic layers.

21. The electronic device as claimed in claim 1 wherein at least one of the layers forming the electronic device comprise a soluble organic layer, including a layers composed of polymeric material and/or oligomeric material and/or material composed of “

small molecules” and

/or material composed of nanoparticles.

22. The electronic device as claimed in claim 21 wherein the thickness of the soluble organic layer which comprises a proportional amount of a solvent, has a thickness value that corresponds to its solvent proportion.

23. The electronic device as claimed in claim 21 wherein the thickness of the soluble organic layer comprises an application quantity, the thickness having a value corresponding to its application quantity.

24. The electronic device as claimed in claim 1 wherein the plurality of layers forming the logic gate comprise a multilayer flexible film body.

25. The electronic device as claimed in claim 1 including an apparatus of a given contour wherein the electronic device is a flexible electronic circuit attached to the apparatus and wherein the circuit matches the apparatus contour.

26. A method of making an electronic device comprising:

forming on a substrate at least one logic gate comprising at least two differently constructed field effect transistors each comprising at least two electrode layers, at least one organic semiconductor layer, and at least one insulator layer; and

forming the layers into at least two differently constructed field effect transistors by at least one of;

a) forming the corresponding respective semiconductor layers of the at least two different field effect transistors from an applied liquid comprising respective different semiconductor material;

or

b) forming the respective corresponding insulator layers of the at least two different field effect transistors from an applied liquid comprising different respective insulator material;

or

c) forming the respective corresponding electrode layers of the at least two different field effect transistors with different respective electrode material.

27. The method of claim 26 wherein the liquid in each instance is one of a suspension, an emulsion, a dispersion or solution.

28. The method of claim 26 further including printing the applied liquid on at least one of the substrate and layers.