Semiconductor, semiconductor device, complementary transistor circuit device
First Claim
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1. A semiconductor comprising an organic semiconductor layer and an oxide semiconductor layer.
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Abstract
A semiconductor device including a semiconductor 1, a first electrode 2, an insulating layer 3 interposed between the semiconductor 1 and the first electrode 2, the second electrode 4 which is in contact with the semiconductor 1 and is detached from the first electrode 2, and the third electrode 5 which is in contact with the semiconductor 1 and is detached from the first electrode 2 and the second electrode 4, wherein the semiconductor 1 is provided with the organic semiconductor layer 10 and the oxide semiconductor layer 11.
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17 Claims
- 1. A semiconductor comprising an organic semiconductor layer and an oxide semiconductor layer.
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12. The semiconductor according to claim a, wherein the oxide semiconductor layer has a stacked layer structure in which a plurality of layered oxides are stacked, and a layered oxide closest to the organic semiconductor layer is formed of a material which allows the layered oxide to have a work function larger than the work function of other layered oxides.
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