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Sensing FET integrated with a high-voltage vertical transistor

  • US 20080197406A1
  • Filed: 02/16/2007
  • Published: 08/21/2008
  • Est. Priority Date: 02/16/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a main vertical transistor, which comprises;

    a substrate of a first conductivity type;

    a pillar of semiconductor material disposed above the substrate, the pillar having a width and a length that extends in a first lateral direction, a first source region comprising one or more regions of the first conductivity type disposed at or near a top surface of the pillar, a body region of a second conductivity type being disposed in the pillar beneath the first source region, an extended drain region of the first conductivity type being disposed in the pillar beneath the body region;

    first and second dielectric regions disposed on opposite sides of the pillar, respectively, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar;

    first and second field plates respectively disposed in the first and second dielectric regions;

    first and second gate members respectively disposed in the first and second dielectric regions at or near the top surface of the pillar adjacent the body region, the first and second gate members being separated from the body region by a gate oxide having a first thickness;

    a sensing transistor, which comprises;

    a second source region of the first conductivity type disposed at or near a top surface of the pillar, the second source region being separated in the first lateral direction from the first source region by an area of the body region that extends to the top surface of the pillar,wherein the sensing transistor is operable to sample a small portion of a current that flows in the main vertical transistor.

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