METHOD OF FORMING A THIN FILM COMPONENT
1 Assignment
0 Petitions
Accused Products
Abstract
Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.
92 Citations
64 Claims
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1-13. -13. (canceled)
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14. A method, comprising:
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depositing a material over at least a portion of a substrate to form at least a portion of a gate dielectric layer; forming one or more electrodes over at least a portion of the substrate by use of one or more solution processes; forming ah encapsulation layer proximate to the one or more electrodes, wherein said encapsulation layer comprises dielectric material, the encapsulation layer formed after formation of the electrodes, and the encapsulation layer at least partially formed over the electrodes; and depositing a material over at least a portion of the substrate to form a channel layer, such that at least a portion of a thin film component is formed, where just the encapsulation layer isolates a portion of the channel layer from any contaminants resulting from formation of the electrodes. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25-37. -37. (canceled)
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38. An apparatus, comprising:
a thin film component having one or more electrodes, and at least one gate dielectric layer and at least one channel layer forming a gate dielectric layer/channel layer interface, wherein an encapsulation layer substantially comprising dielectric material is formed substantially between at least a portion of said gate dielectric layer/channel layer interface, and wherein said encapsulation layer is configured to encapsulate one or more byproducts of formation of said one or more electrodes. - View Dependent Claims (39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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49-53. -53. (canceled)
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54. A thin film transistor (TFT), formed substantially by a process comprising:
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a step for depositing a material over at least a portion of a substrate to form at least a portion of a channel layer; a step for depositing a material over at least a portion of a substrate to form an encapsulation layer, at least a portion of said encapsulation layer comprising dielectric material; and a step for forming one or more electrodes over at least a portion of the substrate by use of one or more steps for solution processing; and a step for depositing a material over at least a portion of the substrate to form a gate dielectric layer. - View Dependent Claims (55, 56, 57, 58, 59, 60, 61, 62, 63, 64)
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Specification