Sensor semiconductor device and manufacturing method thereof

• US 20080197438A1
• Filed: 02/14/2008
• Published: 08/21/2008
• Est. Priority Date: 02/16/2007
• Status: Abandoned Application

• Current Assignee: Siliconware Precision Industries Co., Ltd.
• Original Assignee: Siliconware Precision Industries Co., Ltd.
• Inventors: Huang, Chih-Ming, Huang, Chien-Ping, Chan, Chang-Yueh, Hsiao, Cheng-Hsu, Chang, Tse-Wen
• Application Number:
  US12/070,003
• Publication Number:
  US 20080197438A1
• Time in Patent Office: Days
• US Class Current: 257/434
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80

Abstract

This invention discloses a sensor semiconductor device and a manufacturing method thereof, including: providing a wafer having a plurality of sensor chips, forming a plurality of grooves between bond pads on active surfaces of the adjacent sensor chips; forming conductive traces in the grooves for electrically connecting the bond pads; mounting a transparent medium on the wafer for covering sensing areas of the sensor chips; thinning the sensor chips from the non-active surfaces down to the grooves, thereby exposing the conductive traces; cutting the wafer to separate the sensor chips; mounting the sensor chips on a substrate module having a plurality of substrates, electrically connecting the conductive traces to the substrates; providing an insulation material on the substrate module and between the sensor chips so as to encapsulate the sensor chips but expose the transparent medium; and cutting the substrate module to separate a plurality of resultant sensor semiconductor devices.

Claims

1. A manufacturing method for a sensor semiconductor device, comprising the steps of:

providing a wafer having a plurality of sensor chips, wherein each of the sensor chips has an active surface and a non-active surface opposite thereto, a sensing area and a plurality of bond pads are provided on the active surface, and a plurality of grooves are formed between the bond pads on the active surfaces of adjacent ones of the sensor chips;

forming conductive traces in the grooves for electrically connecting the bond pads on the active surfaces of adjacent ones of the sensor chips;

mounting a transparent medium on the sensor chips for covering the sensing area of the sensor chip;

thinning the sensor chips from the non-active surfaces down to the grooves, thereby exposing the conductive traces from the non-active surface;

cutting the wafer along borders between the sensor chips, such that the sensor chips each laterally formed with the conductive traces are separated from one another;

mounting the sensor chips on a substrate module having a plurality of substrates aligned in matrix, and electrically connecting the conductive traces of the sensor chips to the substrates;

providing an insulation material on the substrate module and between the sensor chips so as to encapsulate the sensor chips but expose the transparent medium; and

cutting the substrate module along borders between the substrates, so as to separate a plurality of sensor semiconductor devices from one another.

2. The manufacturing method of claim 1, wherein the cross-section of the grooves is one selected from the group consisting of V-shaped, U-shaped, and Y-shaped structures.

3. The manufacturing method of claim 1, wherein the conductive traces are made of one selected from the group consisting of titanium/copper/nickel (Ti/Cu/Ni), titanium tungsten/gold (TiW/Au), aluminum/nickel-vanadium/copper (Al/NiV/Cu), titanium/nickel-vanadium/copper (Ti/NiV/Cu), titanium tungsten/nickel (TiW/Ni), titanium/copper/copper (Ti/Cu/Cu), and titanium/copper/copper/nickel (Ti/Cu/Cu/Ni).

4. The manufacturing method of claim 1, wherein the transparent medium is glass and is mounted on the active surfaces of the sensor chips through an adhesive layer for sealing and covering the sensing area of the sensor chips.

5. The manufacturing method of claim 1, wherein a plurality of electrical contacts are formed on the surface of the substrates, and an electrical conduction material is disposed above the electrical contacts, thereby allowing the sensor chips to be mounted on the substrates through an adhesive layer and electrically connected to the substrates through the electrical conduction material.

6. The manufacturing method of claim 5, wherein the electrical conduction material is a pre-solder material disposed above the substrates and soldered to the conductive traces of the sensor chips by a reflow process, thereby allowing the sensor chips to be electrically connected to the substrates.

7. A sensor semiconductor device, comprising:

a substrate;

a sensor chip having an active surface and a non-active surface opposite to the active surface, wherein a sensing area and a plurality of bond pads are formed on the active surface, and conductive traces extended to and electrically connected to the bond pads are formed at the flanks of the sensor chip, thereby allowing the conductive traces to be electrically connected to the substrate through an electrical conduction material;

a transparent medium formed on the active surface of the sensor chip for covering the sensing area; and

an insulation material for encapsulating the sensor chip but exposing the transparent medium.

8. The sensor semiconductor device of claim 7, wherein the conductive traces are made of one selected from the group consisting of titanium/copper/nickel (Ti/Cu/Ni), titanium tungsten/gold (TiW/Au), aluminum/nickel-vanadium/copper (Al/NiV/Cu), titanium/nickel-vanadium/copper (Ti/NiV/Cu), titanium tungsten/nickel (TiW/Ni), titanium/copper/copper (Ti/Cu/Cu), and titanium/copper/copper/nickel (Ti/Cu/Cu/Ni).

9. The sensor semiconductor device of claim 7, wherein the transparent medium is glass and is mounted on the active surface of the sensor chip through an adhesive layer for sealing and covering the sensing area of the sensor chip.

10. The sensor semiconductor device of claim 7, wherein a plurality of electrical contacts are formed on the surface of the substrate, and an electrical conduction material is disposed above the electrical contacts, thereby allowing the sensor chip to be mounted on the substrate through an adhesive layer and electrically connected to the substrate through the electrical conduction material.

11. The sensor semiconductor device of claim 7, wherein the flanks of the sensor chip slope outward from the active surface to the non-active surface.

12. The sensor semiconductor device of claim 7, wherein the flanks of the sensor chip each comprise a sloping-flank portion and a vertical portion, and the sloping-flank portion slops outward from the active surface to the non-active surface.