Electro-optical device and electronic apparatus

• US 20080198314A1
• Filed: 03/04/2008
• Published: 08/21/2008
• Est. Priority Date: 10/04/2001
• Status: Abandoned Application

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Murade, Masao
• Application Number:
  US12/073,344
• Publication Number:
  US 20080198314A1
• Time in Patent Office: Days
• US Class Current: 349/111
• CPC Class Codes: G02F 1/133388 with constructional differences between the display region and the peripheral region
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13606 having means for reducing parasitic capacitance
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/13624 having more than one switching element per pixel

Abstract

An electro-optical device includes a display electrode disposed in an image display region of a TFT array substrate, a pattern portion including at least one of wiring and a circuit element connected to the display electrode directly or through a pixel switching element and provided in a frame region, which defines the periphery of the image display region, and a lower shielding film for covering the TFT array substrate side of at least a portion of the pattern portion. Therefore, in the electro-optical device such as a liquid crystal device, a light-dark pattern due to the wiring and the circuit element provided in the frame region can be prevented from being projected near the edge of a display image.

Claims

1. An electro-optical device comprising:

a first substrate;

a second substrate disposed opposite from the first substrate and including a frame region at the periphery thereof;

a display electrode disposed in an image display region of the first substrate;

a frame-shaped light shielding film disposed in the frame region of the second substrate;

a pattern portion including at least one of a wiring and a transistor, the at least one of the wiring and the transistor being connected to the display electrode directly or through a pixel-switching transistor and being provided in the frame region of the second substrate; and

a lower shielding film interposed between the first substrate and at least a portion of the pattern portion within the frame region of the first substrate, the lower shielding film having an island shape and a floating potential.

2. The electro-optical device according to claim 1, further comprising a frame shielding film provided above the pattern portion in the frame region of the first substrate.

3. The electro-optical device according to claim 1, the lower shielding film being provided above a flat surface of the substrate either directly or through a flat underlying insulating film.

4. The electro-optical device according to claim 1, wherein a film comprising the same film as the lower shielding film is provided at least below the channel region of the second transistor.

5. The electro-optical device according to claim 1, the lower shielding film comprising a light-absorbing film.

6. The electro-optical device according to claim 5, the light-absorbing film comprising at least one of a polysilicon film and a high-melting-point metal film.

7. The electro-optical device according to claim 1, wherein the lower shielding film comprises a conductive film.