Method for manufacturing organic device and electronic apparatus

• US 20080199634A1
• Filed: 02/09/2008
• Published: 08/21/2008
• Est. Priority Date: 02/21/2007
• Status: Active Grant

• Current Assignee: E Ink Corporation (E Ink Holdings Incorporated)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Nakamura, Kiyoshi
• Granted Patent: US 7,897,216 B2
• Time in Patent Office: Days
• US Class Current: 427/596
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 71/135 using ink-jet printing
• CPC Class Codes: H10K 71/211 by selective transformation of an existing layer
• CPC Class Codes: H10K 71/421 using coherent electromagnetic radiation, e.g. laser annealing
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/115 Polyfluorene; Derivatives thereof
• CPC Class Codes: H10K 85/657 Polycyclic condensed heteroaromatic hydrocarbons
• CPC Class Codes: H10K 85/6576 comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
• CPC Class Codes: Y10T 428/31504 Composite [nonstructural laminate]

Abstract

A method for manufacturing an organic device includes disposing a solution containing a conductive organic material in a first region on a substrate, drying the solution to form a conductive organic film in the first region, and irradiating the conductive organic film formed in a second region other than the first region with light to decrease the conductivity of the conductive organic film.

Claims

1. A method for manufacturing an organic device comprising:

disposing a solution containing a conductive organic material in a first region on a substrate;

drying the solution to form a conductive organic film in the first region; and

irradiating the conductive organic film formed in a second region other than the first region with light to decrease the conductivity of the conductive organic film.

2. The method according to claim 1, wherein the conductive organic film is a π

-conjugated organic film, and the light has a wavelength and energy with which π

-electron orbital overlap in a molecular skeleton involved in π

-conjugation can be cut by changing the steric structure of the molecular skeleton.

3. The method according to claim 2, wherein the light is visible light.

4. The method according to claim 1, wherein the conductive organic film is a π

-conjugated organic film, and the light has a wavelength and energy with which the conductive organic film can be oxidized in the presence of oxygen or moisture.

5. The method according to claim 4, wherein the light is ultraviolet light.

6. The method according to claim 5, wherein the light is a laser beam or light narrowed by a lens and is selectively applied to the second region.

7. The method according to claim 5, wherein the light is applied using a mask provided with a light-transmitting region which transmits the light in the second region.

8. The method according to claim 5, wherein a conductive layer which does not transmit the light is formed in the first region, and the light is applied over the entire surface of the substrate using the conductive layer as a mask.

9. The method according to claim 8, wherein the conductive layer is formed to cover a portion of the conductive organic film in the first region as viewed from the irradiation side.

10. The method according to claim 9, wherein the conductive layer serves as a gate electrode of a thin film transistor, and a portion of the conductive organic film serves as a channel region of the thin film transistor.

11. The method according to claim 1, further comprising:

annealing the conductive organic film after forming the conductive organic film,

wherein the annealing is performed after the conductive organic film is irradiated with the light.

12. An electronic apparatus comprising an organic device manufactured by the method according to claim 1.