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VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY

  • US 20080199649A1
  • Filed: 04/14/2008
  • Published: 08/21/2008
  • Est. Priority Date: 11/14/2003
  • Status: Active Grant
First Claim
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1. An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and a (Al,In,Ga)N (000 1) surface offcut from the [000 1] direction at a non-zero angle.

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