Method for Functionalizing Biosensor Chips

• US 20080199974A1
• Filed: 03/18/2005
• Published: 08/21/2008
• Est. Priority Date: 04/21/2004
• Status: Active Grant

• Current Assignee: Boehringer Ingelheim Vetmedica GmbH (C.H. Boehringer Sohn AG & Co. KG)
• Original Assignee: Siemens AG
• Inventors: Frey, Alexander, Hofmann, Franz, Schindler-Bauer, Petra
• Granted Patent: US 8,067,249 B2
• Time in Patent Office: Days
• US Class Current: 438/1
• CPC Class Codes: G01N 27/3277 being a redox reaction, e.g. detection by cyclic voltammetry voltammetry per se G01N27/42, G01N27/48
• CPC Class Codes: G01N 33/54366 Apparatus specially adapted for solid-phase testing

Abstract

A met4hod is disclosed for functionalizing biosensors. The biosensors are based on semiconductor chips mounted on a finished processed wafer. They are provided with sensor fields placed thereupon, which are arranged in any array, and, to be precise, for carrying out a functionalization, for example, with organic molecules such as nucleic acids like DNA, RNA and PNA or with their derivatives, proteins, sugar molecules, or antibodies.

Claims

1. A method for functionalizing a biosensor, comprising:

providing a substrate, including least one sensor field arranged thereon;

applying a photoresist layer over an entire surface of the substrate and then photolithographically patterning the photoresist layer using a photomask with a predetermined pattern, so that a layer which has been patterned in a predetermined way is formed, to form a corresponding cavity above the sensor field;

applying capture molecules to the sensor field, so that the capture molecules are immobilized within the cavity above the sensor field,

wherein prior to application of capture molecules, a carrier layer based on hydrogel is applied to the sensor fields, wherein the application of capture molecules to the sensor fields is carried out with simultaneous application of a carrier layer based on hydrogel to the sensor fields, and wherein the application of capture molecules is followed by the application of an encapsulation layer based on hydrogel; and

mounting the wafer, functionalized in such a manner following the application of capture molecules upside-down mode to a sawing sheet, tensioned in a sawing frame, and sawing the individual chips out of the wafer.

2. The method as claimed in claim 1, wherein the substrate provided is a fully processed wafer having at least one semiconductor chip, at least one sensor field being arranged on the semiconductor chip.

3. The method as claimed in claim 2, wherein an electrical recording circuit is integrated in the semiconductor chip.

4. The method as claimed in claim 2, wherein the semiconductor chip is a CMOS chip.

5. The method as claimed in claims 1, wherein the sensor fields are set up as interdigitated electrode fields.

6. The method as claimed in claims 1, wherein the photoresist is applied in a thickness in the range from 10 to 300 μ

m.

7. The method as claimed in claim 6, wherein the photoresist is a negative UV photoresist of the epoxy type.

24. The method as claimed in claim 2, wherein the semiconductor chip is a CMOS chip.

25. The method as claimed in claim 2, wherein the sensor fields are set up as interdigitated electrode fields.

26. The method as claimed in claim 3, wherein the sensor fields are set up as interdigitated electrode fields.

27. The method as claimed in claim 4, wherein the sensor fields are set up as interdigitated electrode fields.

28. The method as claimed in claim 1, wherein the sensor fields are set up as interdigitated electrode fields made from at least one of gold, platinum and palladium.

29. The method as claimed in claim 2, wherein the sensor fields are set up as interdigitated electrode fields made from at least one of gold, platinum and palladium.

30. The method as claimed in claim 3, wherein the sensor fields are set up as interdigitated electrode fields made from at least one of gold, platinum and palladium.

31. The method as claimed in claim 4, wherein the sensor fields are set up as interdigitated electrode fields made from at least one of gold, platinum and palladium.

32. The method as claimed in claim 2, wherein the photoresist is applied in a thickness in the range from 10 to 300 μ

m.

33. The method as claimed in claim 3, wherein the photoresist is applied in a thickness in the range from 10 to 300 μ

m.

34. The method as claimed in claim 4, wherein the photoresist is applied in a thickness in the range from 10 to 300 μ

m.

35. The method as claimed in claim 5, wherein the photoresist is applied in a thickness in the range from 10 to 300 μ

m.

36. The method as claimed in claim 1, wherein the carrier layer is based on poly(meth)acrylamide gel.

37. The method as claimed in claim 2, wherein the carrier layer is based on poly(meth)acrylamide gel.

8-23. -23. (canceled)