Methods of Forming Inter-poly Dielectric (IPD) Layers in Power Semiconductor Devices
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Accused Products
Abstract
A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer of conductive material to form a first electrode, recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench, forming a layer of polysilicon material on a top surface of the dielectric material and conductive material inside the trench, oxidizing the layer of polysilicon material, and forming a second electrode inside the trench atop the oxidized layer and isolated from trench sidewalls by a second dielectric layer. The oxidation step can be enhanced by either chemically or physically altering the top portion polysilicon such as by implanting impurities.
156 Citations
241 Claims
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1-208. -208. (canceled)
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209. A process for forming an inter-electrode dielectric layer inside a trench, comprising:
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lining sidewalls and bottom of the trench with a first layer of dielectric material; substantially filling the trench with a first layer of conductive material to form a first electrode; recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench; forming a layer of polysilicon material on a top surface of the dielectric material and conductive material inside the trench; oxidizing the layer of polysilicon material thereby converting it into a silicon dioxide layer; and forming a second electrode made of conductive material inside the trench atop the silicon dioxide and isolated from trench sidewalls by a second dielectric layer.
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210. A process for forming an inter-electrode dielectric layer inside a trench, comprising:
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lining sidewalls and bottom of the trench with a first layer of dielectric material; substantially filling the trench with a first layer of conductive material to form a first electrode; recessing the first layer of conductive material to a first depth inside the trench; substantially filling a remaining portion of the trench with dielectric fill material; recessing the first layer of dielectric material and the dielectric fill material to a second depth to form an inter-electrode dielectric layer; and forming a second electrode made of conductive material inside the trench atop the inter-electrode dielectric layer and isolated from trench sidewalls by a second dielectric layer.
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211. A process for forming an inter-electrode dielectric layer inside a trench, comprising:
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lining sidewalls and bottom of the trench with a first layer of dielectric material; substantially filling the trench with a first layer of conductive material to form a first electrode; recessing the first layer of conductive material to a first depth inside the trench such that a top portion of the recessed conductive material is higher than a final target depth by a desired thickness; enhancing an oxidation rate of the top portion of the recessed first layer of conductive material by altering its nature; removing the first layer of dielectric material from remaining trench sidewalls; performing an oxidation step whereby the altered top portion of the first layer of conductive material oxidizes at a faster rate than the trench sidewalls, forming an inter-electrode dielectric layer that is thicker than sidewall dielectric lining; and forming a second electrode made of conductive material inside the trench atop the inter-electrode dielectric layer and isolated from trench sidewalls by the sidewall dielectric lining. - View Dependent Claims (212, 213, 214)
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215. A method for forming an inter-electrode dielectric layer inside a trench, comprising:
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lining sidewalls and bottom of the trench with a first layer of dielectric material; substantially filling the trench with a first layer of conductive material to form a first electrode; recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench; preferentially forming a second layer of dielectric whereby a relatively thicker inter-electrode dielectric layer is formed on horizontal surface structure inside the trench and a relatively thin dielectric layer is formed along sidewalls of the trench; removing the relatively think dielectric layer along sidewalls of the trench; and forming a second electrode made of conductive material inside the trench atop the inter-electrode dielectric layer and isolated from trench sidewalls by a sidewall dielectric lining. - View Dependent Claims (216, 217)
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218. A method forming an inter-electrode dielectric layer inside a trench, comprising:
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lining sidewalls and bottom of the trench with a first layer of dielectric material; substantially filling the trench with a first layer of conductive material to form a first electrode; recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench; forming a thin layer of screen oxide along vertical and horizontal surfaces inside the trench; forming a layer of silicon nitride covering the thin layer of screen oxide; removing the silicon nitride from the bottom of the trench to expose the horizontal layer of screen oxide but leaving the vertical screen oxide covered by the silicon nitride; exposing the trench to an oxidizing ambient to form a relatively thick inter-electrode dielectric layer on the horizontal bottom surface of the trench; removing the silicon nitride from trench sidewalls; and forming a second electrode made of conductive material inside the trench atop the inter-electrode dielectric layer and isolated from trench sidewalls by a sidewall dielectric lining.
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219. A method for forming an inter-electrode dielectric layer inside a trench formed in a semiconductor substrate, comprising:
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forming a first electrode made of conductive material in a lower portion of the trench and isolated from trench sidewalls and bottom by a first dielectric lining; forming a thick layer of dielectric material filling the trench and extending above the semiconductor substrate; substantially planarizing the thick layer of dielectric layer back to a top surface of the semiconductor substrate; and performing an isotropic wet etch process that recesses the remaining portion of the thick layer of dielectric material inside the trench to a target depth. - View Dependent Claims (220, 221)
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222. A method for forming an oxide layer on a semiconductor wafer, comprising:
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applying a DC bias to the semiconductor wafer in a test environment; determining a DC bias condition under which surface reaction with oxygen is substantially inhibited; applying an external bias to semiconductor wafer during oxidation; and manipulating the external bias to optimize a rate of oxidation
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223-235. -235. (canceled)
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236. A method for forming a semiconductor device, comprising:
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forming a drift region of a first conductivity type; forming a well region extending above the drift region and having a second conductivity type opposite the first conductivity type; forming an active trench extending through the well region and into the drift region, lining sidewalls and bottom of the active trench with a first layer of dielectric material; substantially filling the active trench with a first layer of conductive material to form a first electrode; recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench; forming a layer of polysilicon material on a top surface of the dielectric material and conductive material inside the trench; oxidizing the layer of polysilicon material thereby converting it into a silicon dioxide layer; forming a second electrode made of conductive material inside the trench atop the silicon dioxide and isolated from trench sidewalls by a second dielectric layer; forming a plurality of source regions having the first conductivity type in the well region adjacent the active trench; forming a charge control trench extending deeper into the drift region than the active trench; and substantially filling the charge control trench with material to allow for vertical charge control in the drift region. - View Dependent Claims (237, 238, 239, 240, 241)
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Specification