Method of producing semiconductor device

• US 20080200017A1
• Filed: 12/21/2007
• Published: 08/21/2008
• Est. Priority Date: 02/16/2007
• Status: Abandoned Application

• Current Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Original Assignee: OKI Electric Industry Company Limited
• Inventors: Doumae, Yasuhiro
• Application Number:
  US12/003,287
• Publication Number:
  US 20080200017A1
• Time in Patent Office: Days
• US Class Current: 438/528
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2652 Through-implantation
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 29/105 with vertical doping variation H01L29/7827 takes precedence
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795

Abstract

A method of producing a semiconductor device includes the steps of: introducing a p-type impurity corresponding to a conductive type of a channel area into a channel forming area; introducing fluorine into the channel forming area at a low acceleration voltage; and thermally processing a substrate to increase a threshold voltage. In the method of the present invention, the step of thermally processing the substrate is performed after the steps of introducing the p-type impurity into the channel forming area and introducing fluorine into the channel forming area. Further, the steps of introducing the p-type impurity into the channel forming area and introducing fluorine into the channel forming area may be performed any order.

Claims

1. A method of producing a semiconductor device, comprising the steps of:

introducing a p-type impurity corresponding to a conductive type of a channel area into a channel forming area;

introducing fluorine into the channel forming area at a low acceleration voltage; and

thermally processing a substrate to increase a threshold voltage.

2. The method of producing a semiconductor device according to claim 1, where, in the step of introducing the p-type impurity, the p-type impurity is introduced at a concentration so that partial depletion does not occur.

3. The method of producing a semiconductor device according to claim 1, where, in the step of introducing fluorine, fluorine is introduced at a concentration in a range between 5E13 cm⁻

2 and 5E14 cm<sup>−

2</sup>.