Selective Deposition of Noble Metal Thin Films
First Claim
1. A method for selectively depositing a thin film comprising one or more noble metals on a substrate comprising a first surface and a second surface, the method comprising:
- contacting the substrate with a gaseous noble metal precursor;
providing a second reactant gas pulse comprising oxygen to the reaction chamber; and
repeating until a thin film of a desired thickness is obtained selectively on the first surface, wherein the second surface comprises a material selected from the group consisting of silicon oxides, silicon nitrides, silicon oxynitrides, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) and materials containing more than about 50% silicon oxide and wherein the temperature is below about 400°
C.
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Abstract
Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
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Citations
37 Claims
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1. A method for selectively depositing a thin film comprising one or more noble metals on a substrate comprising a first surface and a second surface, the method comprising:
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contacting the substrate with a gaseous noble metal precursor;
providing a second reactant gas pulse comprising oxygen to the reaction chamber; and
repeating until a thin film of a desired thickness is obtained selectively on the first surface, wherein the second surface comprises a material selected from the group consisting of silicon oxides, silicon nitrides, silicon oxynitrides, fluorinated silica glass (FSG), carbon doped silicon oxide (SiOC) and materials containing more than about 50% silicon oxide and wherein the temperature is below about 400°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of fabricating a semiconductor device, comprising
forming a patterned gate dielectric layer over a semiconductor substrate; - and
forming a gate electrode over the gate dielectric layer, wherein forming the gate electrode comprises selectively depositing a film comprising one or more noble metals over the gate dielectric layer by a vapor deposition process. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A method for forming a gate electrode on a silicon substrate comprising:
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forming an interface layer on the substrate;
depositing a first thin film comprising a high k material, metal or conductive metal compound over the interface layer;
patterning the conductive material; and
selectively depositing a second thin film containing noble metal over the patterned conductive material by a vapor deposition process. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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- 36. A method for selectively depositing a noble metal layer on a substrate comprising a first surface and a second insulating surface, the first surface comprising a high k material, metal, metal nitride or conductive metal oxide, the method comprising depositing a layer comprising a noble metal on the first surface relative to the second surface using an atomic layer deposition (ALD) process at a temperature of less than about 400°
Specification