Method for Manufacturing a Magnetoresistive Multilayer Film

• US 20080202917A1
• Filed: 04/29/2008
• Published: 08/28/2008
• Est. Priority Date: 10/16/2003
• Status: Abandoned Application

• Current Assignee: Canon Anelva Corporation (Canon Inc.)
• Original Assignee: Canon Anelva Corporation (Canon Inc.)
• Inventors: TSUNEKAWA, Koji, NAGAI, Motonobu, DJAYAPRAWIRA, David Djulianto
• Application Number:
  US12/111,861
• Publication Number:
  US 20080202917A1
• Time in Patent Office: Days
• US Class Current: 204/192.1
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 5/39 using magneto-resistive devices or effects
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: H01F 10/30 characterised by the composition of the intermediate layers , e.g. seed, buffer, template, diffusion preventing, cap layers H01F10/06 and H01F10/32 take precedence
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 41/18 by cathode sputtering
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: Y10T 29/49025 Making disc drive
• CPC Class Codes: Y10T 29/49032 Fabricating head structure or component thereof
• CPC Class Codes: Y10T 29/49034 Treating to affect magnetic properties
• CPC Class Codes: Y10T 29/49043 Depositing magnetic layer or coating
• CPC Class Codes: Y10T 29/49044 Plural magnetic deposition layers

Abstract

This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Claims

1-16. -16. (canceled)

17. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer on a substrate;

wherein the antiferromagnetic layer is deposited by a sputtering process as a gas of larger atomic number than argon is used at a flow rate of 10 percent or more; and

wherein the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free.

18. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 17, wherein the gas of atomic number larger than argon is krypton.

19. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 17, wherein the gas of atomic number larger than argon is xenon.

20. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer on a substrate;

wherein the antiferromagnetic layer is deposited by a sputtering process as a gas of larger atomic number than argon is used at a flow rate of 50 percent or more; and

wherein the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free.

21. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 20, wherein the gas of atomic number larger than argon is krypton.

22. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 20, wherein the gas of atomic number larger than argon is xenon.

23. A method for manufacturing a magnetoresistive multilayer film, comprising

laminating an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer on a substrate;

wherein the antiferromagnetic layer is deposited by a sputtering process as a gas of larger atomic number than argon is used at a flow rate of 100 percent; and

wherein the pinned-magnetization layer is the layer where direction of magnetization is pinned by coupling with the antiferromagnetic layer, and the free-magnetization layer is the layer where direction of magnetization is free.

24. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 23, wherein the gas of atomic number larger than argon is krypton.

25. A method for manufacturing a magnetoresistive multilayer film as claimed in the claim 23, wherein the gas of atomic number larger than argon is xenon.