Thin film transistor and method of manufacturing the same
First Claim
Patent Images
1. A thin film transistor (TFT) including:
- a gate;
a channel layer;
a source and a drain, the source and the drain being formed of metal; and
a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain.
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Abstract
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
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Citations
38 Claims
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1. A thin film transistor (TFT) including:
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a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a thin film transistor (TFT) comprising:
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forming a gate on a substrate; forming a gate insulating layer covering the gate on the substrate; forming a channel layer on the gate insulating layer; and forming a source and a drain by sequentially stacking a metal oxide layer and a metal layer on the channel layer and the gate insulating layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 31)
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20. A method of manufacturing a thin film transistor (TFT) comprising
forming a gate on a substrate; -
forming a gate insulating layer covering the gate on the substrate; forming a channel layer on the gate insulating layer; stacking a metal layer on the channel layer and the gate insulating layer; and forming a metal oxide layer between the metal layer and the channel layer. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 32, 33, 34, 35, 36, 37, 38)
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Specification