CMOS IMAGE SENSORS INCLUDING BACKSIDE ILLUMINATION STRUCTURE AND METHOD OF MANUFACTURING IMAGE SENSOR
First Claim
1. An image sensor having a backside illumination structure, comprising:
- a photo diode unit in a first wafer, the photo diode unit comprising photo diodes and transfer gate transistors coupled to respective ones of the photo diodes;
a wiring line unit on a second wafer bonded to the photo diode unit comprising wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit;
a supporting substrate bonded to the wiring line unit; and
a filter unit formed under the first wafer.
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Accused Products
Abstract
An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.
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Citations
20 Claims
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1. An image sensor having a backside illumination structure, comprising:
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a photo diode unit in a first wafer, the photo diode unit comprising photo diodes and transfer gate transistors coupled to respective ones of the photo diodes; a wiring line unit on a second wafer bonded to the photo diode unit comprising wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit; a supporting substrate bonded to the wiring line unit; and a filter unit formed under the first wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing an image sensor having a backside illumination structure, the method comprising:
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forming a photo diode unit comprising photo diodes, and transfer gate transistors, which respectively correspond to the photo diodes, in a first wafer; bonding the photo diode unit on a second wafer and forming a wiring line unit including transistors, for signal processing and controlling, and wiring lines on the second wafer; bonding a supporting substrate on the wiring line unit; and forming a filter unit below the first wafer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A CMOS image sensor circuit comprising:
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a photo diode unit comprising photo diodes and transfer gate transistors coupled to respective ones of the photo diodes and configured to be positioned in an incident light path; a micro-lens and filter unit upstream in the incident light path from the photo diode unit; and a wiring line unit positioned downstream in the incident light path from the photo diode unit, the wiring line unit comprising wiring lines and transistors configured to processing signals provided by the photo diode unit. - View Dependent Claims (19, 20)
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Specification