Lateral Field-Effect Transistor Having an Insulated Trench Gate Electrode
First Claim
1. A semiconductor device having a first major surface;
- comprising;
at least one cell having longitudinally spaced source and drain regions at the first major surfaced, a source body region at the end of the source region facing the drain region, a drain body region at the end of the drain region facing the source region and a drift region extending from the source body region to the drain body regions;
at least one pair of longitudinally spaced insulated gates, one of the pair being adjacent to the source body region and the other of the pair being adjacent to the drain body region, the gates extending longitudinally with longitudinal side walls, the insulated gates being formed in trenches having gate dielectric along the side and end walls and the base of the trench and a gate conductor within the gate dielectric; and
plates adjacent to the drift region for controlling the drift region to carry current flowing between source and drain when the device is switched on and to support a voltage between source and drain when the device is switched off.
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Abstract
A field-effect transistor having cells (18) each having a source region (22), source body region (26), drift region (20), drain body region (28) and drain region (24) arranged longitudinally, laterally alternating with structures to achieve a reduced surface field. In embodiments, the structures can include longitudinally spaced insulated gate trenches (35) defining a gate region (31) adjacent the source or drain region (22, 24) and a longitudinally extending potential plate region (33) adjacent the drift region (20). Alternatively, a separate potential plate region (33) or a longitudinally extending semi-insulating field plate (50) may be provided adjacent the drift region (20). The transistor is suitable for bi-directional switching.
7 Citations
15 Claims
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1. A semiconductor device having a first major surface;
- comprising;
at least one cell having longitudinally spaced source and drain regions at the first major surfaced, a source body region at the end of the source region facing the drain region, a drain body region at the end of the drain region facing the source region and a drift region extending from the source body region to the drain body regions;at least one pair of longitudinally spaced insulated gates, one of the pair being adjacent to the source body region and the other of the pair being adjacent to the drain body region, the gates extending longitudinally with longitudinal side walls, the insulated gates being formed in trenches having gate dielectric along the side and end walls and the base of the trench and a gate conductor within the gate dielectric; and plates adjacent to the drift region for controlling the drift region to carry current flowing between source and drain when the device is switched on and to support a voltage between source and drain when the device is switched off. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
- comprising;
Specification