Sensor-type semiconductor package and method for fabricating the same

• US 20080203511A1
• Filed: 02/26/2008
• Published: 08/28/2008
• Est. Priority Date: 02/26/2007
• Status: Abandoned Application

• Current Assignee: Siliconware Precision Industries Co., Ltd.
• Original Assignee: Siliconware Precision Industries Co., Ltd.
• Inventors: Huang, Chien-Ping, Chan, Chang-Yueh, Chang, Cheng-Yi
• Application Number:
  US12/072,369
• Publication Number:
  US 20080203511A1
• Time in Patent Office: Days
• US Class Current: 257/434
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68377 with parts of the auxiliary support remaining in the finished device
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/33 of a plurality of layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80

Abstract

The present invention provides a sensor-type semiconductor package and a method for fabricating the same. The method includes the steps of: providing a wafer having a plurality of sensor chips for mounting the wafer on a carrier board having an insulation layer, a plurality of conductive traces, and a substrate; forming a plurality of grooves among the solder pads on the active surfaces of the adjacent sensor chips, so as to expose the conductive traces and form a metal layer in the grooves, to electrically connect to the solder pads on the active surfaces of the adjacent sensor chips and the conductive traces; disposing a transparent medium on the wafer to cover the sensing areas of the sensor chips; removing the substrate, so as to expose the conductive traces and the insulation layer; and cutting the sensor chips along the borders to form a plurality of sensor-type semiconductor packages. This can avoid the formation of slanted grooves on the non-active surface on the wafer and shift in position of the grooves due to failure to align with the cutting lines among the sensor chips, as observed in prior art. Consequently, the problems such as stress concentration and cracking are likely to occur in the contact points of the traces formed in the slanted grooves and the traces in the active surfaces.

Claims

1. A fabricating method for fabricating a sensor-type semiconductor package, comprising the steps of:

providing a wafer having a plurality of sensor chips and a carrier board, the wafer and each of the sensor chips having an active surface and a non-active surface opposed thereto, a sensing area and a plurality of solder pads being disposed on the active surface of each of the sensor chips, and the carrier board having a substrate, a plurality of conductive traces disposed on the substrate, and an insulation layer covering the substrate and the conductive traces, so as to mount the wafer on the insulation layer of the carrier board;

forming a plurality of grooves among the solder pads on the active surfaces of the sensor chips, and the depths of the grooves stopping at the positions of the conductive traces;

forming a metal layer in the grooves, and the metal player being electrically connected to the solder pads on the sensor chips and the conductive traces of the carrier board;

disposing a transparent medium on the wafer to cover the sensing areas;

removing the substrate of the carrier board, so as to expose the conductive traces and insulation layer; and

cutting the sensor chips along their borders to form a plurality of sensor-type semiconductor packages.

2. The fabricating method of claim 1, wherein a method for fabricating the carrier board comprises the steps of:

providing a substrate;

forming a resist on the substrate, and forming a plurality of openings in the resist to expose the substrate;

electroplating the conductive traces into the openings;

removing the resist; and

forming an insulation layer on the substrate to cover the conductive traces and the substrate.

3. The fabricating method of claim 1, wherein the insulation layer is made of one of B-stage epoxy and polyimide.

4. The fabricating method of claim 1, wherein the wafer is thinned before being mounted on the carrier board.

5. The fabricating method of claim 1, wherein each of the grooves is one selected from the group consisting of an U-shaped groove, a V-shaped groove, and a Y-shaped groove.

6. The fabricating method of claim 1, wherein a method for fabricating the metal layer comprises the steps of:

forming a conductive layer on the active surface of the wafer and the surfaces of the grooves;

forming a resist on the conductive layer, and forming a plurality of openings in the conductive layer to correspond to the grooves;

forming the metal layer in the openings of the resist, and the metal layer being electrically connected to the solder pads of the sensor chips and the conductive traces of the carrier board; and

removing the resist and the conductive layer below the resist.

7. The fabricating method of claim 6, wherein the conductive layer is an under-bump metallization (UBM) layer formed by sputtering or vaporizing, and is made of one selected from the group consisting of titanium/copper/nickel (Ti/Cu/Ni), titanium tungsten/gold (TiW/Au), aluminum/nickel vanadium/copper (Al/NiV/Cu), titanium/nickel vanadium/copper (Ti/NiV/Cu), titanium tungsten/nickel (TiW/Ni), titanium/copper/copper (Ti/Cu/Cu), and titanium/copper/copper/nickel (Ti/Cu/Cu/Ni).

8. The fabricating method of claim 1, wherein the transparent medium is disposed on the wafer through an adhesive layer adhered to the periphery of the sensor chips, and the adhesive layer covers the metal layer but not the sensing areas of the sensor chips, such that the transparent medium covers the sensing areas of the sensor chips.

9. The fabricating method of claim 1, wherein after the substrate is removed, a solder mask is formed on the insulation layer, and a plurality of openings are formed on the solder mask, so as to expose the conductive traces to receive a plurality of electrical conduction elements, and the sensor chips are cut along the borders to form a plurality of sensor-type semiconductor packages.

10. The fabricating method of claim 1, wherein the method for fabricating the metal layer comprises:

filling a plurality of insulation fillers in the grooves of the wafer;

forming a plurality of openings in the insulation fillers, so as to expose the conductive traces;

forming a conductive layer on the active surface of the wafer and the surfaces of the insulation fillers;

forming a resist on the conductive layer, and forming a plurality of openings in the resist to correspond to the grooves;

electroplating the metal layer into the openings on the resist, forming the metal layer in the openings of the insulation fillers, and electrically connecting the metal layer to the conductive traces and the solder pads on the active surfaces of the sensor chips; and

removing the resist and the conductive layer below the resist.

11. The fabricating method of claim 10, wherein the insulation fillers are made of polyimide.

12. The fabricating method of claim 10, wherein the widths of the openings of the insulation fillers are smaller than the widths of the grooves, so that a portion of the insulation fillers covers the sides of the sensor chips.

13. A sensor-type semiconductor package, comprising:

an insulation layer having a top surface and a bottom surface opposed thereto;

a plurality of conductive traces disposed at the periphery of the bottom surface of

the insulation layer;

a sensor chip having an active surface and a non-active surface opposed thereto, the non-active surface being disposed on the top surface of the insulation layer, and a sensing area and a plurality of solder pads being formed on the active surface;

a metal layer disposed on the sides of the sensor chip and the insulation layer, the metal layer being electrically connected to the solder pads of the sensor chip and the conductive traces at the bottom surface of the insulation layer; and

a transparent medium formed on the active surface of the sensor chip to cover the sensing area.

14. The sensor-type semiconductor package of claim 13, wherein the surface of the conductive traces are level with the bottom surface of the insulation layer.

15. The sensor-type semiconductor package of claim 13, wherein the insulation layer is made of one of B-stage epoxy and polyimide.

16. The sensor-type semiconductor package of claim 13, wherein the wafer is thinned.

17. The sensor-type semiconductor package of claim 13, wherein each of the grooves is one selected from the group consisting of an U-shaped groove, a V-shaped groove, and a Y-shaped groove.

18. The sensor-type semiconductor package of claim 13, wherein a conductive layer is further formed between the metal layer and the sensor chip.

19. The sensor-type semiconductor package of claim 18, wherein the conductive layer is an under-bump metallization (UBM) layer made of one selected from the group consisting of titanium/copper/nickel (Ti/Cu/Ni), titanium tungsten/gold (TiW/Au), aluminum/nickel vanadium/copper (Al/NiV/Cu), titanium/nickel vanadium/copper (Ti/NiV/Cu), titanium tungsten/nickel (TiW/Ni), titanium/copper/copper (Ti/Cu/Cu), and titanium/copper/copper/nickel (Ti/Cu/Cu/Ni).

20. The sensor-type semiconductor package of claim 13, wherein the transparent medium is adhered to the wafer through an adhesive layer adhered to the periphery of the sensor chip, and the adhesive layer covers the metal layer but not the sensing areas of the sensor chip, such that the transparent medium covers the sensing areas of the sensor chip.

21. The sensor-type semiconductor package of claim 13, wherein a solder mask is further formed on the insulation layer, and a plurality of openings are formed in the solder mask to expose the conductive traces and receive a plurality of electrical conduction elements.

22. The sensor-type semiconductor package of claim 13, wherein a plurality of insulation fillers are further formed between the metal layer and the sensor chip.

23. The sensor-type semiconductor package of claim 22, wherein the insulation fillers are made of polyimide.