Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device

• US 20080203515A1
• Filed: 02/12/2008
• Published: 08/28/2008
• Est. Priority Date: 02/15/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kusumoto, Naoto, Nishi, Kazuo, Sugawara, Yuusuke
• Granted Patent: US 8,207,589 B2
• Time in Patent Office: Days
• US Class Current: 257/443
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 31/147 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
• CPC Class Codes: H01L 31/153 formed in, or on, a common substrate

Abstract

A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.

Claims

1. A photoelectric conversion device comprising:

a photodiode receiving light and an amplifier circuit for amplifying output of the photodiode, which are provided on a surface of a substrate having an insulating surface;

an insulating layer covering the photodiode and the amplifier circuit;

first and second output terminals formed over the insulating layer, the first output terminal being connected to the photodiode and the second output terminal being connected to the amplifier circuit; and

first and second connection electrodes connected to the first and second output terminals, respectively,

wherein each of the first and second connection electrodes is continuously extends from a top surface of the insulating layer to a portion of a side surface of the substrate.

2. The photoelectric conversion device according to claim 1, wherein the photodiode has a structure in which a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer are stacked.

3. The photoelectric conversion device according to claim 1, wherein the amplifier circuit is a current mirror circuit.

4. The photoelectric conversion device according to claim 3, wherein the current mirror circuit is formed from a thin film transistor.

5. An electronic device comprising the photoelectric conversion device according to claim 1.

6. A photoelectric conversion device comprising:

a photodiode receiving light and an amplifier circuit for amplifying output of the photodiode, which are provided on a surface of a substrate having an insulating surface;

an insulating layer covering the photodiode and the amplifier circuit;

first and second output terminals formed over the insulating layer, the first output terminal being connected to the photodiode and the second output terminal being connected to the amplifier circuit; and

first and second connection electrodes connected to the first and second output terminals, respectively,

wherein the substrate has tapered portions sloping inward from portions of side surfaces to said surface, and

wherein each of the first and second connection electrodes is continuously extends from a top surface of the insulating layer to ends of the tapered portions of the substrate.

7. The photoelectric conversion device according to claim 6, wherein the photodiode has a structure in which a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer are stacked.

8. The photoelectric conversion device according to claim 6, wherein the amplifier circuit is a current mirror circuit.

9. The photoelectric conversion device according to claim 8, wherein the current mirror circuit is formed from a thin film transistor.

10. An electronic device comprising the photoelectric conversion device according to claim 6.

11. A method for manufacturing a photoelectric conversion device, comprising the steps of:

forming an amplifier circuit and a photodiode connected to the amplifier circuit over a substrate having an insulating surface;

forming an insulating layer covering the amplifier circuit and the photodiode;

forming first and second output terminals over the insulating layer, the first output terminal being connected to the photodiode and the second output terminal being connected to the amplifier circuit, and

forming first and second connection electrodes connected to the first and second output terminals, respectively,

wherein each of the first and second connection electrodes is continuously extends from a top surface of the insulating layer to a portion of a side surface of the substrate.

12. A method for manufacturing a photoelectric conversion device, comprising the steps of:

forming a photodiode receiving light and a plurality of integrated circuits including an amplifier circuit for amplifying output of the photodiode, over a surface of a substrate having an insulating surface;

forming an insulating layer covering the plurality of integrated circuits;

forming first and second output terminals over the insulating layer, for each of the plurality of integrated circuits, the first output terminal being connected to the photodiode and the second output terminal being connected to the amplifier circuit;

forming V-shaped grooves in the insulating layer and the substrate between the plurality of the integrated circuits;

forming first and second connection electrodes so as to cover portions of a top surface of the insulating layer and fill the V-shaped grooves, the first and second connection electrodes being connected to the first and second output terminals, respectively; and

dividing the plurality of integrated circuits at the approximate center of each V-shaped groove.