Semiconductor device equipped with thin-film circuit elements

• US 20080203526A1
• Filed: 02/25/2008
• Published: 08/28/2008
• Est. Priority Date: 02/26/2007
• Status: Abandoned Application

• Current Assignee: Teramikros, Inc. (Powertech Technology Inc)
• Original Assignee: Casio Computer Company Limited
• Inventors: Mihara, Ichiro
• Application Number:
  US12/072,210
• Publication Number:
  US 20080203526A1
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05569 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/19015 including thin film passive components

Abstract

A plurality of wirings, column-shaped electrodes, sealing films, and soldering balls, are provided on a third upper-layer insulating film formed on a silicon substrate. A spirally configured thin-film inductive element is disposed beneath the bottom surface of a ground insulating film formed beneath the silicon substrate. The inner and outer end portions of the thin-film inductive element are respectively connected to the wirings via a vertical conductor disposed in the silicon substrate. In this case, it is not required to secure a certain area otherwise needed for the formation of the thin-film inductive element over the surface of the third upper-layer insulating film that accommodates the wirings. Hence, even when the thin-film inductive element has been provided, it is possible to evade a feasibility to incur restraint on the distribution of the wirings formed over the surface of the third upper-layer insulating film.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a plurality of connecting pads formed on a one-surface thereof;

a plurality of the first wirings disposed on the one-surface thereof in such a way as to be connected to the connecting pads;

a thin-film circuit element formed on the other surface of the semiconductor substrate; and

vertical conductors formed in the semiconductor substrate so as to connect the thin-film circuit element with the wirings.

2. The semiconductor device according to claim 1, wherein the thin film circuit element comprises a thin-film inductive element which is spirally configured.

3. The semiconductor device according to claim 2, wherein the inner and outer end portions of the thin-film circuit element are respectively connected to the vertical conductors formed at two locations in the semiconductor substrate.

4. The semiconductor device according to claim 2, further comprising:

a second wiring and a third wiring for the thin-film inductive element, the second wiring and the third wiring being disposed on another layer which is a different layer from a layer of the thin-film inductive element formed on the other surface of the semiconductor substrate, wherein the second wiring is connected to one of the vertical conductors and the third wiring is connected to another one of the vertical conductors.

5. The semiconductor device according to claim 1, wherein a plurality of column-shaped electrodes are formed on the connecting pads provided for the first wirings.

6. The semiconductor device according to claim 5, wherein a sealing film is formed in the periphery of the column-shaped electrodes.

7. The semiconductor device according to claim 6, wherein soldering balls are disposed on the column-shaped electrodes.

8. The semiconductor device according to claim 1, wherein an over-coating film is provided for covering component elements other than the connecting pads provided for the first wirings.

9. The semiconductor device according to claim 8, wherein the soldering balls are formed on the connecting pads provided for the first wirings.

15. The semiconductor device according to claim 1, wherein a plurality of column-shaped electrodes are disposed on the connecting pads of the second wirings.

16. The semiconductor device according to claim 15, wherein a sealing film is provided in the periphery of the column-shaped electrodes.

17. The semiconductor device according to claim 16, wherein a plurality of soldering balls are provided on the column-shaped electrodes.

10. A semiconductor device comprising:

a semiconductor substrate having a plurality of connecting pads formed on one-surface thereof;

a plurality of the first wirings disposed on the one-side surface of the semiconductor substrate in such a way as to be connected to the connecting pads;

a thin-film circuit element that is essentially a spirally configured thin-film inductive element disposed on the other side surface of the semiconductor substrate; and

a vertical conductor formed in the semiconductor substrate so as to enable the thin-film circuit element to be connected to the first wirings.

11. A semiconductor device comprising:

a semiconductor substrate having a plurality of connecting pads formed on the one-surface thereof;

a plurality of first wirings disposed on the one-surface of the semiconductor substrate in such a way as to be individually connected to the connecting pads;

a thin-film circuit element formed on the one-surface of the semiconductor substrate in such a way as to be connected to the first wirings;

a plurality of second wirings formed on the other surface of the semiconductor substrate; and

vertical conductors formed in the semiconductor substrate so as to connect the first wirings to be connected to the second wirings.

12. The semiconductor device according to claim 11, wherein the thin-film circuit element is a spirally configured thin-film inductive element.

13. The semiconductor device according to claim 12, wherein the outer end of the thin-film inductive element is connected to the first wirings, whereas the inner end of the same thin-film inductive element is connected to the second wirings via the second vertical conductor disposed in the semiconductor substrate.

14. The semiconductor device according to claim 12, wherein the second wirings for the thin-film inductive element are disposed on another layer which is a different layer from a layer of the thin-film inductive element, one of the second wirings being connected to one of the vertical conductors and another one of the wirings being connected to another one of the vertical conductors.

18. The semiconductor device according to claim 11, wherein an over-coating film is provided for covering component elements other than the connecting pads of the second wirings.

19. The semiconductor device according to claim 18, wherein a plurality of soldering balls are provided on the connecting pads of the second wirings.

20. A semiconductor device comprising:

a semiconductor substrate having a plurality of connecting pads formed on a one-surface thereof;

a plurality of first wirings disposed on the one-surface of the semiconductor substrate in such a way as to be connected to the connecting pads;

a thin-film circuit element, which is essentially a spirally configured thin-film inductive element provided on the one-surface of the semiconductor substrate in such a way as to be connected to the first wirings;

a plurality of second wirings disposed on the other surface of the semiconductor substrate; and

vertical conductors formed in the semiconductor substrate so as to connect the first wirings to be connected to the second wirings.