Component, Power Component, Apparatus, Method Of Manufacturing A Component, And Method Of Manufacturing A Power Semiconductor Component
First Claim
Patent Images
1. A component, comprising:
- a device carrier;
a device applied to the device carrier;
a first conducting layer grown onto the device and onto the device carrier; and
an insulating material applied to the first conducting layer such that only a portion of the first conducting layer is covered.
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Accused Products
Abstract
A component has a device applied to a device carrier, a first conducting layer grown onto the device and onto the device carrier, and an insulating material applied to the first conducting layer such that only a portion of the first conducting layer is covered.
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Citations
45 Claims
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1. A component, comprising:
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a device carrier; a device applied to the device carrier; a first conducting layer grown onto the device and onto the device carrier; and an insulating material applied to the first conducting layer such that only a portion of the first conducting layer is covered. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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17. A power component, comprising:
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a lead frame comprising at least one first lead, at least one second lead, and at least one third lead insulated from one another; a semiconductor power device comprising a first contact on a first surface of the semiconductor power device, comprising a second contact on a second surface, opposite the first surface, of the semiconductor power device, and comprising a control contact, the first contact of the semiconductor power device being electrically connected to the first lead of the lead frame; an insulating layer which at least partially covers the lead frame and the semiconductor power device, the insulating layer comprising, at least in the areas of the second and third leads of the lead frame and in the area of the second contact and of the control contact of the semiconductor power device, first, second, third, and fourth openings exposing the second and third leads of the lead frame and the second contact and the control contact of the semiconductor power device; a first conducting layer applied to the insulating layer and extending into the first and third openings in the insulating layer, and connecting the second lead of the lead frame to the second contact of the semiconductor power device; and a second conducting layer applied to the insulating layer and extending into the second and fourth openings in the insulating layer, and connecting the third lead of the lead frame to the control contact of the semiconductor power device; and a package, wherein the lead frame, the semiconductor power device, and the first conducting layer, and the second conducting layer are at least partially embedded such that a portion of the first conducting layer remains exposed over the semiconductor power device. - View Dependent Claims (18, 19)
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20. An apparatus, comprising:
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a first means for signal processing comprising a first contactor and a second contactor; a second means for supporting the first means, the second means comprising two lead means insulated from one another, the first lead means being electrically connected to the first contact means, and the second lead apparatus being conductively connected to the second contact means via a third means; and a fourth means for at least partially embedding the first, second, and third means such that at least a portion of the third means is exposed over the first means.
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30. A method of manufacturing a component, comprising:
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providing a device carrier; providing a device; applying the device to the device carrier; growing a first conducting layer onto the device and onto the device carrier; and applying an insulating material to the first conducting layer in such a manner that only a portion of the first conducting layer is covered. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
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45. A method of manufacturing a power semiconductor component:
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providing a conductive device carrier comprising a drain lead, a source lead, and a gate lead insulated from one another; providing a power semiconductor device having a drain contact, a source contact, and a gate contact, the drain contact being located on a first surface of the power semiconductor device, and the source contact and the gate contact being located on a second surface opposite the first surface, attaching the power semiconductor device such that the drain contact is located on and electrically connected to the drain lead; applying the insulating layer; structuring the insulating layer; applying a seed layer by means of a deposition process; lithographic structuring on the seed layer; galvanic reinforcement of the seed layer after structuring; removing the lithography layer; second lithographic structuring on the galvanic deposition and/or other areas; second galvanic reinforcement; removing the seed layer between the planar connections by means of differential etching; package encapsulation by enclosing the device carrier by molding compound in an injection molding process; cleaning and tinning the package leads; and labeling and separating the packages.
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Specification