Power device package and semiconductor package mold for fabricating the same

• US 20080203559A1
• Filed: 01/29/2008
• Published: 08/28/2008
• Est. Priority Date: 02/28/2007
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Korea Semiconductor Limited (ON Semiconductor Corporation)
• Inventors: Lim, Seung-won, Park, Sung-min, Lee, Keun-hyuk
• Granted Patent: US 8,258,622 B2
• Time in Patent Office: Days
• US Class Current: 257/718
• CPC Class Codes: H01L 2023/405 heatsink to package
• CPC Class Codes: H01L 2023/4087 Mounting accessories, interposers, clamping or screwing parts
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/13034 Silicon Controlled Rectifier [SCR]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/207 Diameter ranges

Abstract

Provided are a power device package coupled to a heat sink using a bolt and a semiconductor package mold for fabricating the same. The power device package includes: a substrate; at least one power device mounted on the substrate; a mold member sealing the substrate and the power device; and at least one bushing member fixed to the mold member to provide a through hole for a bolt member for coupling a heat sink to the mold member.

Claims

1. A power device package comprising:

a substrate;

at least one power device mounted on the substrate;

a mold member sealing the substrate and the power device; and

at least one bushing member fixed to the mold member to provide a through hole for a bolt member for coupling a heat sink to the mold member.

2. The power device package of claim 1, wherein the substrate comprises a surface exposed outside the mold member, and the heat sink is coupled to the exposed surface of the substrate.

3. The power device package of claim 1, wherein the substrate and the power device are entirely sealed by the mold member.

4. The power device package of claim 1, wherein the substrate is a lead frame.

5. The power device package of claim 1, wherein the substrate is an insulating substrate comprising a first surface on which a conductive pattern electrically connected with the power device is formed.

7. The power device package of claim 5, wherein the substrate comprises:

a second surface opposite to the first surface; and

a base metal layer formed on the second surface to contact the heat sink.

8. The power device package of claim 7, wherein the base metal layer is formed of one selected from the group consisting of aluminum, an aluminum alloy, copper, and a copper alloy.

9. The power device package of claim 1, further comprising at least one control device for controlling the power device mounted on the substrate.

10. The power device package of claim 1, wherein the bushing member is formed of one selected from the group consisting of aluminum, an aluminum alloy, copper, and a copper alloy.

11. The power device package of claim 1, wherein the mold member comprises a recess portion receiving a head portion of the bolt member.

12. The power device package of claim 1, wherein the bushing member comprises a receiving part comprising an inner circumference surface defining the through hole and an outer circumference surface contacting the mold member.

13. The power device package of claim 12, wherein the bushing member further comprises a first protruding part providing a first surface contacting a head portion of the bolt member at a first end of the receiving part.

14. The power device package of claim 12, wherein the bushing member further comprises a second protruding part protruding from a surface of the mold member at a second end of the receiving part.

15. The power device package of claim 12, wherein the bushing member further comprises an uneven part on the outer circumference surface of the receiving part.

16. The power device package of claim 12, wherein the bushing member comprises a recess part in the outer circumference surface of the receiving part.

17. The power device package of claim 1, wherein the bushing member is spaced apart from the substrate.

18. The power device package of claim 1, wherein the mold member is injected using a transfer molding process.

6. The power device package of claim 6, wherein the insulating substrate is a ceramic substrate.

19. A semiconductor package mold comprising:

first and second molds for fabricating a power device package using a transfer molding process,

wherein the semiconductor package mold provides a cavity configured by an inner surface of the first mold, an inner surface of the second mold, and an outer circumference surface of at least one bushing member providing a through hole for a bolt member for coupling a heat sink and a mold member to the power device package.

20. The semiconductor package mold of claim 19, wherein the inner surface of the first mold contacts a first end of the bushing member, and the inner surface of the second mold contacts a second end of the bushing member so as to provide the cavity.

21. The semiconductor package mold of claim 19, wherein a protruding portion is formed on the inner surface of the first mold to provide a recess portion for receiving a head portion of the bolt member.

22. The semiconductor package mold of claim 19, wherein a groove is formed in the second mold to receive a part of an end of the bushing member such that the end of the bushing member protrudes from a surface of the mold member.

23. A power device package comprising:

a substrate;

at least one semiconductor device mounted on the substrate;

a mold member sealing the substrate and the power device; and

at least one bushing member fixed to the mold member.