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DC-DC Converter that Includes a High Frequency Power MESFET Gate Drive Circuit

  • US 20080203991A1
  • Filed: 02/18/2008
  • Published: 08/28/2008
  • Est. Priority Date: 01/26/2006
  • Status: Abandoned Application
First Claim
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1. A DC-to-DC converter comprising series-connected low-side and high-side MESFETs where:

  • the low-side MESFET is powered by a low-side gate drive circuit that limits the maximum forward biasing of the Schottky gate intrinsic to the low side MESFET to a maximum voltage or maximum current;

    where the low-side gate drive circuit is ground referenced;

    the low-side gate drive circuit is powered from the battery; and

    wherethe high-side MESFET is powered by a floating gate drive circuit that limits the maximum forward biasing of the Schottky gate intrinsic to the high side MESFET to a maximum voltage or maximum current;

    wherethe high-side gate drive circuit is referenced to the source of the high-side MESFET and to the drain of the low-side MESFET;

    the high-side gate drive circuit is powered from a bootstrap capacitor charged through a bootstrap diode.

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