Liquid crystal device

• US 20080204616A1
• Filed: 12/10/2007
• Published: 08/28/2008
• Est. Priority Date: 02/23/2007
• Status: Active Grant

• Current Assignee: Japan Display West Incorporated (Japan Display Incorporated)
• Original Assignee: Epson Imaging Devices Corporation (Seiko Group)
• Inventors: Fujita, Shin
• Granted Patent: US 8,300,164 B2
• Time in Patent Office: Days
• US Class Current: 349/39
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/1393 the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells G02F1/1396, G02F1/141 take precedence
• CPC Class Codes: G02F 2201/40 Arrangements for improving the aperture ratio

Abstract

A liquid crystal device have an element substrate including a scanning line, a data line and a pixel electrode, a cutout is formed on the pixel electrode. A capacitor line for providing a storage capacitor is formed on the element substrate. The capacitor line has a first and second portions. The first portion extends along with the scanning line, and a second line portion overlaps the cutout of the pixel electrode.

Claims

1. A liquid crystal device comprising:

an element substrate including a scanning line, a data line and a pixel electrode formed at an intersection thereof, the pixel electrode including a cutout;

a counter substrate opposite the element substrate;

a liquid crystal held between the element substrate and the counter substrate; and

a capacitor line for providing a storage capacitor, the capacitor line including a first capacitor line portion that extends along with the scanning line, and a second capacitor line portion that overlaps the cutout of the pixel electrode.

2. The liquid crystal device, according claim 1, the first and the second capacitor line portions being formed as a wiring that passes through a plurality of pixels that extend along the capacitor line.

3. The liquid crystal device according to claim 1, the capacitor line further including a third capacitor line portion that connects the first and second capacitor line portions each other, the third capacitor line overlapping the data line.

4. The liquid crystal device according to claim 1, further comprising a pixel switching element that is formed between the data line and the pixel electrode, the pixel switching element being ON state in a case where the scanning lines is selected,

wherein the pixel switching element is composed of a thin-film transistor, and

wherein a semiconductor layer used in the thin-film transistor extends to a region which overlaps the first and second capacitor line portions and a storage capacitor is formed between the semiconductor layer and the first and second capacitor line portions at the region.

5. A liquid crystal device comprising:

an element substrate including a scanning line, a data line and a pixel electrode formed at an intersection thereof,

the pixel electrode being divided into a plurality of sub-pixel electrodes connected with a connecting portion therebetween;

a counter substrate opposite the element substrate;

a liquid crystal held between the element substrate and the counter substrate, the liquid crystal has a negative anisotropy of dielectric constant; and

a capacitor line for providing a storage capacitor,

the capacitor line including a first capacitor line portion that extends along with the scanning lines, and

a second capacitor line portion overlapping a region provided between sub-pixel electrodes.

6. The liquid crystal device, according claim 5, wherein the first and the second capacitor line portions are formed as a wiring that passes through a plurality of pixels that extend along the capacitor line.

7. The liquid crystal device according to claim 5, the capacitor line further including a third capacitor line portion that connects the first and second capacitor line portions each other, and the third capacitor line overlapping the data line.

8. The liquid crystal device according to claim 5, further comprising a pixel switching element that is formed between the data line and the pixel electrode, the pixel switching element being ON state in a case where the scanning lines is selected,

wherein the pixel switching element is composed of a thin-film transistor, and

wherein a semiconductor layer used in the thin-film transistor extends to a region which overlaps the first and second capacitor line portions and a storage capacitor is formed between the semiconductor layer and the first and second capacitor line portions at the region.

9. A liquid crystal device comprising:

an element substrate including a scanning line, a data line and a pixel electrode formed at an intersection thereof,

the pixel electrode extending obliquely with respect to a direction perpendicular to a direction in which the scanning line extends, and

the pixel electrode including a bend portion;

a counter substrate opposite the element substrate;

a liquid crystal held between the element substrate and the counter substrate; and

a capacitor line for providing a storage capacitor, the capacitor line including a first capacitor line portion that extends along with the scanning lines, and a second capacitor line portion that overlaps the bend portion.

10. The liquid crystal device, according claim 9, the first and the second capacitor line portions being formed as a wiring that passes through a plurality of pixels that extend along the capacitor line.

11. The liquid crystal device according to claim 9, the capacitor line further includes a third capacitor line portion that connects the first and second capacitor line portions each other, and the third capacitor line overlapping the data line.

12. The liquid crystal device according to claim 9, further comprising a pixel switching element that is formed between the data line and the pixel electrode, the pixel switching element being ON state in a case where the scanning lines is selected,

wherein the pixel switching element is composed of a thin-film transistor, and

wherein a semiconductor layer used in the thin-film transistor extends to a region which overlaps the first and second capacitor line portions and a storage capacitor is formed between the semiconductor layer and the first and second capacitor line portions at the region.