Memory Element and Semiconductor Device, and Method for Manufacturing the Same
First Claim
1. A memory element comprising:
- a first conductive layer formed over a first region of an insulating surface;
a second conductive layer formed over a second region of the insulating surface; and
a conductive particle deposited between the first conductive layer and the second conductive layer, the conductive particle having a surface covered with an organic film,wherein the first region is apart from the second region, andwherein the first and second conductive layers are electrically connectable to each other at least through the conductive particle as a result in a writing operation of the memory element.
2 Assignments
0 Petitions
Accused Products
Abstract
It is an object to solve inhibition of miniaturization of an element and complexity of a manufacturing process thereof. It is another object to provide a nonvolatile memory device and a semiconductor device having the memory device, in which data can be additionally written at a time besides the manufacturing time and in which forgery caused by rewriting of data can be prevented. It is further another object to provide an inexpensive nonvolatile memory device and semiconductor device. A memory element is manufactured in which a first conductive layer, a second conductive layer that is beside the first conductive layer, and conductive fine particles of each surface which is covered with an organic film are deposited over an insulating film. The conductive fine particles are deposited between the first conductive layer and the second conductive layer.
-
Citations
23 Claims
-
1. A memory element comprising:
-
a first conductive layer formed over a first region of an insulating surface; a second conductive layer formed over a second region of the insulating surface; and a conductive particle deposited between the first conductive layer and the second conductive layer, the conductive particle having a surface covered with an organic film, wherein the first region is apart from the second region, and wherein the first and second conductive layers are electrically connectable to each other at least through the conductive particle as a result in a writing operation of the memory element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A memory element comprising:
-
a first conductive layer formed over an insulating surface; an insulating film formed over the insulating surface and over a part of the first conductive layer to expose a portion of the first conductive layer; a second conductive layer formed over the insulating film wherein the second conductive layer partly overlaps the first conductive layer with the insulating film interposed therebetween; and a conductive particle deposited on the exposed portion of the first conductive layer, wherein the first and second conductive layers are electrically connectable to each other at least through the conductive particle as a result in a writing operation of the memory element. - View Dependent Claims (10, 11, 12)
-
-
13. A semiconductor device including a plurality of memory elements each of which comprises:
-
a first conductive layer and a second conductive layer that is beside the first conductive layer with an interval “
d”
over a same insulating film;a first conductive fine particle that overlaps the first conductive layer, a second conductive fine particle that overlaps a region between the first conductive layer and the second conductive layer; and a third conductive fine particle that overlaps the second conductive layer. - View Dependent Claims (14, 15, 16, 17, 18, 19)
-
-
20. A method for manufacturing a semiconductor device, comprising the steps of:
-
forming a conductive film over an insulating surface; forming a mask over the conductive film; performing etching selectively to the conductive film using the mask to form a first conductive layer and a second conductive layer; and forming a layer containing a conductive fine particle at least between a side face of the first conductive layer and a side face of the second conductive layer which is opposite to the side face. - View Dependent Claims (21, 22, 23)
-
Specification