SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD OF THE SAME
First Claim
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1. A semiconductor memory device comprising:
- a memory cell array;
a voltage generating circuit;
a memory circuit which stores a reference pulse number of an advance-write voltage of the memory cell array and a parameter; and
a control circuit which controls, when a pulse number of the advance-write voltage is less than the reference pulse number of the advance-write voltage, the voltage generating circuit in a manner to decrease at least an initial value of a write voltage and a step-up width of the write voltage in accordance with the parameter.
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Abstract
A semiconductor memory device includes a memory cell array, a voltage generating circuit, a memory circuit which stores a reference pulse number of an advance-write voltage of the memory cell array and a parameter, and a control circuit which controls, when a pulse number of the advance-write voltage is less than the reference pulse number of the advance-write voltage, the voltage generating circuit in a manner to decrease at least an initial value of a write voltage and a step-up width of the write voltage in accordance with the parameter.
29 Citations
19 Claims
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1. A semiconductor memory device comprising:
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a memory cell array; a voltage generating circuit; a memory circuit which stores a reference pulse number of an advance-write voltage of the memory cell array and a parameter; and a control circuit which controls, when a pulse number of the advance-write voltage is less than the reference pulse number of the advance-write voltage, the voltage generating circuit in a manner to decrease at least an initial value of a write voltage and a step-up width of the write voltage in accordance with the parameter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor memory device capable of storing multi-bit data in one memory cell, comprising:
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a memory cell array in which the memory cell is disposed; a voltage generating circuit; a memory circuit which stores a reference pulse number of an advance-write voltage of the memory cell array and a parameter; and a control circuit which controls, when a pulse number of the advance-write voltage is less than the reference pulse number of the advance-write voltage, the voltage generating circuit in a manner to decrease at least an initial value of a write voltage and a step-up width of the write voltage in accordance with the parameter. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A control method of a semiconductor memory device including a memory cell array, a voltage generating circuit, a memory circuit which stores a reference pulse number of an advance-write voltage of the memory cell array and a parameter, and a control circuit which controls the voltage generating circuit, the method comprising:
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causing the control circuit to execute an erase operation in the memory cell array; counting a pulse number of pulses of an advance-write voltage which is applied to the memory cell array after the erase operation, thereby detecting deterioration information of the memory cell array; changing, when a write operation is executed in the memory cell array, the parameter in a manner to decrease at least an initial value of a write voltage and a step-up width of the write voltage in a case where the counted pulse number of the advance-write voltage is less than the reference pulse number of the advance-write voltage; and controlling the voltage generating circuit and executing the write operation by using the changed parameter. - View Dependent Claims (19)
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Specification