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Local self-boost inhibit scheme with shielded word line

  • US 20080205147A1
  • Filed: 10/10/2007
  • Published: 08/28/2008
  • Est. Priority Date: 02/27/2007
  • Status: Active Grant
First Claim
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1. A method of shielding word line capacitive coupling in memory devices, comprising:

  • applying a first voltage to a first word line in a memory array of a memory device;

    applying the first voltage to one or more second word lines to capacitively shield the first word line, wherein the one or more second word lines are directly adjacent to the first word line; and

    applying at least one third voltage to at least one or more third word lines, wherein the at least one or more second word lines are adjacent to the directly adjacent the first word line and one or more second word lines in the memory array.

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