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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

  • US 20080205148A1
  • Filed: 02/08/2008
  • Published: 08/28/2008
  • Est. Priority Date: 02/09/2007
  • Status: Active Grant
First Claim
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1. A nonvolatile semiconductor memory device comprising:

  • a plurality of word lines;

    a plurality of bit lines;

    a plurality of sense amplifiers, each amplifier being connected to one of said plurality of bit lines respectively; and

    a memory cell array including a memory cell region including a plurality of memory strings having a plurality of electrically reprogrammable memory cells connected in series, each of said memory cells having two or more storage states, said plurality of memory cells being connected to a corresponding word line of said plurality of word lines respectively, said plurality of memory strings being connected to a corresponding bit line of said plurality of bit lines respectively, and at the time of programming all of said plurality of bit lines are selected, the number of said storage states being different in two of said memory cells which are adjacent on the same bit line.

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