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Low tempertature sintering using Sn2+ containing inorganic materials to hermetically seal a device

  • US 20080206589A1
  • Filed: 05/15/2007
  • Published: 08/28/2008
  • Est. Priority Date: 02/28/2007
  • Status: Abandoned Application
First Claim
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1. A method for inhibiting oxygen and moisture penetration of a device, said method comprising the steps of:

  • depositing an Sn2+-containing inorganic oxide material over at least a portion of said device; and

    heat treating said Sn2+-containing inorganic oxide material that is deposited over said at least a portion of said device.

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