Patterning self-aligned transistors using back surface illumination
First Claim
1. A method of patterning a semiconductor layer to form a transistor, comprising:
- forming gate, source, and drain electrodes of the transistor on a transparent substrate, a width of the drain electrode and a width of the source electrode greater than a width of the gate electrode;
depositing a semiconductor layer proximate to the gate, source and drain electrodes;
depositing photoresist over the semiconductor layer;
exposing the photoresist to light directed through the transparent substrate, the gate electrode masking the photoresist from the light; and
removing the semiconductor layer in regions exposed to the light.
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Accused Products
Abstract
Fabrication methods for making thin film devices on transparent substrates are described. Gate, source, and drain electrodes of a transistor are formed on a transparent substrate. The widths of the drain electrode and source electrodes are greater than a width of the gate electrode. A dielectric layer is formed on the gate electrode. A semiconductor layer is deposited proximate to the gate, source and drain electrodes. Photoresist is deposited on the semiconductor. The photoresist is exposed to light directed through the transparent substrate so that the gate electrode masks the photoresist from the light. The semiconductor layer is removed in regions exposed to the light.
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Citations
21 Claims
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1. A method of patterning a semiconductor layer to form a transistor, comprising:
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forming gate, source, and drain electrodes of the transistor on a transparent substrate, a width of the drain electrode and a width of the source electrode greater than a width of the gate electrode; depositing a semiconductor layer proximate to the gate, source and drain electrodes; depositing photoresist over the semiconductor layer; exposing the photoresist to light directed through the transparent substrate, the gate electrode masking the photoresist from the light; and removing the semiconductor layer in regions exposed to the light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating a display backplane, comprising:
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forming enable lines of the display backplane on a transparent substrate; forming an array of pixel electrodes and data lines on the transparent substrate; depositing a semiconductor layer proximate to the enable lines, the pixel electrodes, and the data lines; depositing photoresist over the semiconductor layer; exposing the photoresist to light directed through the transparent substrate, the enable lines masking the photoresist from the light; and removing the semiconductor layer in regions where the photoresist was exposed to the light. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A method of fabricating a display backplane, comprising:
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patterning enable lines on a transparent substrate; forming a semiconductor layer over the enable lines; depositing photoresist over the semiconductor layer; exposing the photoresist to light through the transparent substrate; and removing the semiconductor layer in regions exposed to the light. - View Dependent Claims (20, 21)
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Specification