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INTERCONNECT STRUCTURES WITH A METAL NITRIDE DIFFUSION BARRIER CONTAINING RUTHENIUM AND METHOD OF FORMING

  • US 20080206982A1
  • Filed: 02/26/2007
  • Published: 08/28/2008
  • Est. Priority Date: 02/26/2007
  • Status: Active Grant
First Claim
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1. A method for forming an interconnect structure, the method comprising:

  • providing a substrate having a micro-feature opening formed within a dielectric material, the micro-feature opening having a sidewall surface and a bottom surface; and

    exposing the substrate to a precursor of a nitride-forming metal, a nitrogen precursor, and a ruthenium precursor to form a metal nitride diffusion barrier comprising ruthenium, nitrogen, and the nitride-forming metal over the sidewall and bottom surfaces of the micro-feature.

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