INTERCONNECT STRUCTURES WITH A METAL NITRIDE DIFFUSION BARRIER CONTAINING RUTHENIUM AND METHOD OF FORMING
First Claim
1. A method for forming an interconnect structure, the method comprising:
- providing a substrate having a micro-feature opening formed within a dielectric material, the micro-feature opening having a sidewall surface and a bottom surface; and
exposing the substrate to a precursor of a nitride-forming metal, a nitrogen precursor, and a ruthenium precursor to form a metal nitride diffusion barrier comprising ruthenium, nitrogen, and the nitride-forming metal over the sidewall and bottom surfaces of the micro-feature.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for forming an interconnect structure for copper metallization and an interconnect structure containing a metal nitride diffusion barrier are described. The method includes providing a substrate having a micro-feature opening formed within a dielectric material and forming a metal nitride diffusion barrier containing ruthenium, nitrogen, and a nitride-forming metal over the surfaces of the micro-feature. The nitride-forming metal is selected from Groups IVB, VB, VIB, and VIIB of the Periodic Table, and the metal nitride diffusion barrier is formed by exposing the substrate to a precursor of the nitride-forming metal, a nitrogen precursor, and a ruthenium precursor.
-
Citations
32 Claims
-
1. A method for forming an interconnect structure, the method comprising:
-
providing a substrate having a micro-feature opening formed within a dielectric material, the micro-feature opening having a sidewall surface and a bottom surface; and exposing the substrate to a precursor of a nitride-forming metal, a nitrogen precursor, and a ruthenium precursor to form a metal nitride diffusion barrier comprising ruthenium, nitrogen, and the nitride-forming metal over the sidewall and bottom surfaces of the micro-feature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A method for forming an interconnect structure, the method comprising:
-
providing a substrate having a micro-feature opening formed within a dielectric material, the micro-feature opening having a sidewall surface and a bottom surface; exposing the substrate to a carbonyl precursor of a nitride-forming metal, a nitrogen precursor, Ru3(CO)12, and CO carrier gas to form a metal nitride diffusion barrier comprising ruthenium, nitrogen, and the nitride-forming metal over the sidewall and bottom surfaces of the micro-feature, wherein the nitride-forming metal is selected from Groups IVB, VB, VIB, and VIIB of the Periodic Table; removing the metal nitride diffusion barrier from the bottom surface of the micro-feature; then, depositing a seed layer comprising Cu or Ru over the sidewall and bottom surfaces of the micro-feature; and then, filling the micro-feature with Cu.
-
-
22. A method for forming an interconnect structure, the method comprising:
-
providing a substrate having a micro-feature opening formed within a dielectric material, the micro-feature opening having a sidewall surface and a bottom surface; exposing the substrate to a carbonyl precursor of a nitride-forming metal, a nitrogen precursor, Ru3(CO)12, and CO carrier gas to form a metal nitride diffusion barrier comprising ruthenium, nitrogen, and the nitride-forming metal over the sidewall and bottom surfaces of the micro-feature, wherein the nitride-forming metal is selected from Groups IVB, VB, VIB, and VIIB of the Periodic Table; depositing a Ru seed layer over the metal nitride diffusion barrier; removing the metal nitride diffusion barrier and the Ru seed layer from the bottom surface of the micro-feature; and then, filling the micro-feature with Cu. - View Dependent Claims (23)
-
-
24. An interconnect structure, comprising:
-
a micro-feature opening formed within a dielectric material, the micro-feature having a sidewall surface and a bottom surface; a metal nitride diffusion barrier on the sidewall surface of the micro-feature and comprising ruthenium, nitrogen and a nitride-forming metal selected from Groups IVB, VB, VIB, and VIIB of the Periodic Table; and Cu filling the micro-feature. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32)
-
Specification