Microwave hybrid and plasma rapid thermal processing of semiconductor wafers

• US 20080207008A1
• Filed: 01/23/2008
• Published: 08/28/2008
• Est. Priority Date: 01/25/2007
• Status: Abandoned Application

• Current Assignee: BTU International, Incorporated (Amtech Systems, Inc.)
• Original Assignee: BTU International, Incorporated (Amtech Systems, Inc.)
• Inventors: Peelamedu, Ramesh, Wong, David C.
• Application Number:
  US12/011,009
• Publication Number:
  US 20080207008A1
• Time in Patent Office: Days
• US Class Current: 438/795
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32825 Working under atmospheric pressure or higher
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

Microwave energy is used as a radiation source for rapid thermal processing of semiconductor wafers. In one aspect, a hybrid material formed from a microwave modulator material is used to provide temperature uniformity across the wafer and to avoid cracking or breaking of wafers due to the development of thermal stresses. In another aspect, microwave-generated atmospheric pressure plasma is used to heat the wafer either directly or indirectly.

Claims

1. A hybrid microwave process for rapid thermal processing of a substrate, comprising:

disposing a substrate to be heated in a cavity;

providing a hybrid material comprised of a microwave modulator material, the hybrid material located with respect to the substrate to attenuate microwave radiation prior to reaching at least a portion of the substrate; and

introducing microwave radiation into the cavity to heat the substrate, at least a portion of the microwave radiation attenuated by the hybrid material prior to reaching the substrate, wherein the hybrid material causes heat to be distributed more uniformly to the substrate.

2. The process of claim 1, wherein the hybrid material has a thickness to allow at least 50% of microwave energy to reach the wafer.

3. The process of claim 1, wherein the hybrid material has a configuration to allow at least 50% of microwave energy to reach the wafer.

4. The process of claim 1, wherein the hybrid material is disposed to attenuate microwave radiation reaching edges of the substrate.

5. The process of claim 1, wherein the hybrid material is disposed in thermally conductive contact with one surface and edges of the substrate.

6. The process of claim 1, wherein the hybrid material comprises a plate.

7. The process of claim 1, wherein the hybrid material comprises a plurality of rods.

8. The process of claim 1, wherein the hybrid material comprises a crucible having a bottom surface and edges configured to match the substrate.

9. The process of claim 1, wherein the hybrid material is spaced from the substrate.

10. The process of claim 1, wherein the hybrid material comprises silicon carbide.

11. The process of claim 1, wherein the hybrid material comprises a magnetic ferrite material.

12. The process of claim 1, further comprising disposing a buffer between the substrate and the hybrid material, the buffer comprised of a material that absorbs substantially no microwave radiation.

13. The process of claim 12, wherein the buffer material comprises quartz.

14. The process of claim 12, wherein the buffer comprises a top plate and a bottom plate, the substrate sandwiched between the top plate and the bottom plate.

15. The process of claim 14, wherein the top plate of the buffer is continuously solid.

16. The process of claim 14, wherein the top plate of the buffer is perforated.

17. The process of claim 1, further comprising disposing the substrate in an interior chamber within the cavity.

18. The process of claim 1, wherein the substrate comprises a semiconductor wafer.

19. The process of claim 1, wherein the substrate is comprised of silicon, gallium arsenide, gallium phosphide, gallium nitride, germanium, indium phosphide, zinc oxide, silicon carbide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, or zinc telluride wafer materials.

20. The process of claim 1, wherein the cavity is a single mode or a multi-mode cavity.

21. The process of claim 1, wherein the cavity is insulated.

22. A plasma microwave process for rapid thermal processing of a substrate, comprising:

enclosing a substrate to be heated at least partially in a sheath comprised of a heat conductive material;

disposing the substrate enclosed in the sheath in a cavity;

heating the substrate by forming a plasma in the cavity by subjecting a gas in the cavity to microwave radiation, whereby the plasma heats the substrate.

23. The process of claim 22, wherein the sheath encloses at least edges of the substrate.

24. The process of claim 22, wherein the sheath comprises a top plate and a bottom plate, the substrate sandwiched between the top plate and the bottom plate.

25. The process of claim 24, wherein the top plate of the sheath is continuously solid.

26. The process of claim 24, wherein the top plate of the sheath is perforated.

27. The process of claim 22, wherein the sheath is comprised of a metal.

28. The process of claim 22, wherein the sheath is comprised of an austenitic nickel-based superalloy or stainless steel.

29. The process of claim 22, further comprising providing a plasma catalyst in the cavity for initiating, modulating, and sustaining the plasma.

30. The process of claim 22, wherein the plasma is formed at atmospheric pressure.

31. The process of claim 22, further comprising disposing the substrate in an interior chamber within the cavity.

32. The process of claim 22, wherein the substrate comprises a semiconductor wafer.

33. The process of claim 22, wherein the substrate is comprised of silicon, gallium arsenide, gallium phosphide, gallium nitride, germanium, indium phosphide, zinc oxide, silicon carbide, cadmium selenide, cadmium telluride, zinc sulfide, zinc selenide, or zinc telluride wafer materials.

34. The process of claim 22, wherein the cavity is a single mode or a multi-mode cavity.

35. The process of claim 22, wherein the cavity is insulated.