Light Emitting Diode Employing an Array of Nanorods and Method of Fabricating the Same

• US 20080210956A1
• Filed: 06/05/2006
• Published: 09/04/2008
• Est. Priority Date: 08/19/2005
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Hwa Mok
• Granted Patent: US 7,816,700 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

Disclosed are a light emitting diode employing an array of nanorods and a method of fabricating the same. The light emitting diode comprises an array of semiconductor nanorods positioned on a substrate. An upper electrode layer is deposited on the array of the nanorods such that an empty space remains between adjacent ones of the nanorods. Since the space between adjacent ones of the nanorods is not filled with an insulating material, the light extraction efficiency of a light emitting diode can be improved and a method of fabricating the light emitting diode can be simplified.

Claims

1. A light emitting diode, comprising:

an array of semiconductor nanorods positioned on a substrate; and

an upper electrode layer deposited on the array such that an empty space remains between adjacent ones of the nanorods.

2. The light emitting diode as claimed in claim 1, wherein each of the nanorods comprises a first semiconductor nanorod of a first conductive type, a second semiconductor nanorod of a second conductive type, and an active layer interposed between the first and second semiconductor nanorods.

3. The light emitting diode as claimed in claim 1, wherein the upper electrode layer is made of a transparent electrode material, and the light emitting diode further comprises an upper electrode pad formed on the upper electrode layer.

4. The light emitting diode as claimed in claim 3, further comprising a lower electrode layer of the first conductive type interposed between the substrate and the array, and a lower electrode pad, wherein the nanorods are grown on the lower electrode layer, the lower electrode layer has an extension portion extending from a side of the array of the nanorods, and the lower electrode pad is formed on the extension portion.

5. The light emitting diode as claimed in claim 3, further comprising a lower electrode pad formed on a bottom surface of the substrate, wherein the substrate is a conductive substrate.

6. A method of fabricating a light emitting diode, comprising the steps of:

growing nanorods on a substrate;

depositing an upper electrode layer on the nanorods such that an empty space remains between adjacent ones of the nanorods.