Structure and Method for Forming Accumulation-mode Field Effect Transistor with Improved Current Capability
First Claim
1. An accumulation-mode field effect transistor comprising:
- a drift region of a first conductivity type;
channel regions of the first conductivity type over and in contact with the drift region;
gate trenches having sidewalls abutting the channel regions, the gate trenches extending into the drift region; and
a first plurality of silicon regions of a second conductivity type forming P-N junctions with the channel regions along vertical walls of the first plurality of silicon regions, the first plurality of silicon regions extending into the drift region so as to form P-N junctions with the drift region along bottoms of the first plurality of silicon regions.
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Abstract
An accumulation-mode field effect transistor includes a drift region of a first conductivity type, channel regions of the first conductivity type over and in contact with the drift region, and gate trenches having sidewalls abutting the channel regions. The gate trenches extend into and terminate within the drift region. The transistor further includes a first plurality of silicon regions of a second conductivity type forming P-N junctions with the channel regions along vertical walls of the first plurality of silicon regions. The first plurality of silicon regions extend into the drift region and form P-N junctions with the drift region along bottoms of the first plurality of silicon regions.
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Citations
25 Claims
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1. An accumulation-mode field effect transistor comprising:
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a drift region of a first conductivity type; channel regions of the first conductivity type over and in contact with the drift region; gate trenches having sidewalls abutting the channel regions, the gate trenches extending into the drift region; and a first plurality of silicon regions of a second conductivity type forming P-N junctions with the channel regions along vertical walls of the first plurality of silicon regions, the first plurality of silicon regions extending into the drift region so as to form P-N junctions with the drift region along bottoms of the first plurality of silicon regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming an accumulation-mode field effect transistor, the method comprising:
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forming a channel region of a first conductivity type in a semiconductor region of the first conductivity type, the channel region extending from a top surface of the semiconductor region to a first depth within the semiconductor region; forming gate trenches in the semiconductor region, the gate trenches extending from the top surface of the semiconductor region to a second depth within the semiconductor region below the first depth; and forming a first plurality of silicon regions of a second conductivity type in the semiconductor region such that the first plurality of silicon regions form P-N junctions with the channel region along vertical walls of the first plurality of silicon regions. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification