WAFER LEVEL PACKAGING
First Claim
1. A method of forming contacts for an integrated circuit, comprising:
- providing a substrate with at least one integrated circuit;
forming a first trench in the top side of the substrate;
forming a second trench in the back side of the substrate so that the second trench crosses the first trench to form a through via;
inserting a conductor in the through via to form an electrical contact on both the top side and the back side;
positioning a bond pad on the top side; and
connecting the bond pad to the conductor.
7 Assignments
0 Petitions
Accused Products
Abstract
Through vias in a substrate are formed by creating a trench in a top side of the substrate and at least one trench in the back side of the substrate. The sum of the depths of the trenches at least equals the height of the substrate. The trenches cross at intersections, which accordingly form the through vias from the top side to the back side. The through vias are filled with a conductor to form contacts on both sides and the edge of the substrate. Contacts on the backside are formed at each of the trench. The through vias from the edge contacts. Traces connect bond pads to the conductor in the through via. Some traces are parallel to the back side traces. Some traces are skew to the back side traces. The substrate is diced to form individual die.
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Citations
67 Claims
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1. A method of forming contacts for an integrated circuit, comprising:
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providing a substrate with at least one integrated circuit; forming a first trench in the top side of the substrate; forming a second trench in the back side of the substrate so that the second trench crosses the first trench to form a through via; inserting a conductor in the through via to form an electrical contact on both the top side and the back side; positioning a bond pad on the top side; and connecting the bond pad to the conductor. - View Dependent Claims (2, 3)
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4. A method of forming contacts for an integrated circuit, comprising:
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providing a substrate with at least one integrated circuit; forming a first trench in the top side of the substrate; forming a second trench in the back side of the substrate so that the second trench crosses the first trench to form a through via; inserting a conductor in the through via to extend from the top side to the back side; positioning a bond pad on the top side; connecting the bond pad to the conductor; and forming a back side contact, which is connected to the conductor, at one end of the second trench. - View Dependent Claims (5, 6)
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7. A method of forming contacts for an integrated circuit, comprising:
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providing a substrate with at least one integrated circuit; forming a first trench in the top side of the substrate; forming a second trench in the back side of the substrate so that the second trench crosses the first trench to form a through via; inserting a conductor in the through via to extend from the top side to the back side; positioning a bond pad on the top side; connecting the bond pad to the conductor; forming a back side contact, which is connected to the conductor, at one end of the second trench; and backgrinding the back side of the substrate so that the back side is essentially coplanar to the back side contact. - View Dependent Claims (8, 9, 10)
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11. A method of forming a substrate level package of two integrated circuit devices, comprising:
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providing a first substrate including a plurality of first integrated circuit devices separated by streets; forming first trenches in the streets on a top side of the first substrate; forming second trenches on the backside of the first substrate so that the second trenches and first trenches intersect to form through vias from the top side to the backside of the first substrate; inserting a conductor into the through vias to form contacts on the top side and the backside; connecting the conductor to at least one of the plurality of first integrated circuit devices; providing a second substrate including a plurality of second individual integrated circuit devices separated by streets; connecting the plurality of second integrated circuit devices to the first plurality of integrated circuit devices; and separating connected pairs of the connected first integrated circuit devices and second integrated circuit devices from the other pairs of connected first integrated circuit devices and second integrated circuit devices. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of forming a substrate level package of two integrated circuit devices, comprising:
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providing a first substrate including a plurality of first dies separated by streets, the first dies including bond pads on an active side of the substrate and traces connected to the bond pads; forming first trenches in the streets on a top side of the first substrate; forming second trenches on the backside of the first substrate so that the second trenches and first trenches intersect to form through vias from the top side to the backside of the first substrate; inserting a conductor into the through vias to form contacts on the top side and the backside; connecting the conductor to at least one of the bond pads using one of the traces; providing a second substrate including a plurality of second individual integrated circuit devices separated by streets; connecting the plurality of second integrated circuit devices to the first plurality of integrated circuit devices; and separating connected pairs of the connected first integrated circuit devices and second integrated circuit devices from the other pairs of connected first integrated circuit devices and second integrated circuit devices. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method of forming a substrate level package of two integrated circuit devices, comprising:
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providing a first substrate including a plurality of first integrated circuit devices separated by streets; forming first trenches in the streets on a top side of the first substrate; forming second trenches on the backside of the first substrate so that the second trenches and first trenches intersect to form through vias from the top side to the backside of the first substrate; inserting a conductor into the through vias to form contacts on the top side and the backside; connecting the conductor to at least one of the plurality of first integrated circuit devices; providing a second substrate including a plurality of second individual integrated circuit devices separated by streets; connecting the plurality of second integrated circuit devices to the first plurality of integrated circuit devices; separating connected pairs of the connected first integrated circuit devices and second integrated circuit devices from the other pairs of connected first integrated circuit devices and second integrated circuit devices; encapsulating a pair of the connected first integrated circuit device and second integrated circuit device; and providing contacts to the pair of the connected first integrated circuit device and second integrated circuit device at the backside of one of the pair. - View Dependent Claims (35, 36, 37, 38)
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39. A method for joining dies of a first substrate to dies of a second substrate, comprising:
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providing a plurality of first dies separated by saw streets on the first substrate; providing a plurality of second dies separated by saw streets on the second substrate; forming through vias the first substrate; placing a conductor in the through vias; connecting the conductor in the through vias to integrated circuits of the first substrate; forming contacts on the backside of the first substrate connected to the conductor; aligning the saw streets of the first substrate with the saw streets of the second substrate; connecting a first die with a second die that is aligned active side to active side with the first die; and separating the connected first die and second die from a remainder of the first and second substrates. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. A die, comprising:
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a substrate; an active area on the substrate; an insulation layer on the active area; first and second bond pads on the insulation layer and electrically connected to the active area; a first contact; a second contact; a first trace connecting the first bond pad to the first contact; and a second trace connecting the second bond pad to the second contact, the second trace being nonparallel to the first trace. - View Dependent Claims (50, 51, 52, 53, 54, 55, 56, 57)
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58. A die, comprising:
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a substrate having a first edge and a second edge opposite the first edge; an active area on the substrate; a first recess in the first edge; a first contact in the first recess; a second recess in the second edge; a second contact in the second recess; a first bond pad on the substrate and electrically connected to the active area; a second bond pad on the substrate and electrically connected to the active area; a first trace connecting the first bond pad to the first contact; and a second trace connecting the second bond pad to the second contact. - View Dependent Claims (59, 60, 61)
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62. A die, comprising:
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a substrate; a plurality of bond pads on the substrate; a plurality of pairs of contacts on the substrate, wherein a first contact of the pairs is linearly aligned in a first direction with a second contact of the pair and a first bond pad of the plurality of bond pads; a first trace connecting the first contact to the first bond pad; and a second trace connecting a second bond pad of the plurality of bond pads to the second contact. - View Dependent Claims (63, 64, 65, 66, 67)
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Specification