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WAFER LEVEL PACKAGING

  • US 20080211113A1
  • Filed: 05/13/2008
  • Published: 09/04/2008
  • Est. Priority Date: 06/14/2002
  • Status: Active Grant
First Claim
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1. A method of forming contacts for an integrated circuit, comprising:

  • providing a substrate with at least one integrated circuit;

    forming a first trench in the top side of the substrate;

    forming a second trench in the back side of the substrate so that the second trench crosses the first trench to form a through via;

    inserting a conductor in the through via to form an electrical contact on both the top side and the back side;

    positioning a bond pad on the top side; and

    connecting the bond pad to the conductor.

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