METHODS FOR FABRICATING SEMICONDUCTOR COMPONENTS AND PACKAGED SEMICONDUCTOR COMPONENTS
First Claim
1. A method of manufacturing semiconductor components, comprising:
- forming a plurality of first trenches in lanes between dies on a first side of a semiconductor wafer;
filling at least a portion of the first trenches with a protective material;
forming a plurality of second trenches on a second side of the wafer, wherein the first trenches are at least generally aligned with the second trenches along the lanes;
filling at least a portion of the second trenches with the protective material; and
cutting through the wafer along the lanes.
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0 Petitions
Accused Products
Abstract
Packaged semiconductor components and methods for manufacturing packaged semiconductor components. In one embodiment a semiconductor component comprises a die having a semiconductor substrate and an integrated circuit. The substrate has a first side, a second side, a sidewall between the first and second sides, a first indentation at the sidewall around a periphery of the first side, and a second indentation at the sidewall around a periphery of the second side. The component can further include a first exterior cover at the first side and a second exterior cover at the second side. The first exterior cover has a first extension in the first indentation, and the second exterior cover has a second extension in the second indentation. The first and second extensions are spaced apart from each other by an exposed portion of the sidewall.
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Citations
37 Claims
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1. A method of manufacturing semiconductor components, comprising:
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forming a plurality of first trenches in lanes between dies on a first side of a semiconductor wafer; filling at least a portion of the first trenches with a protective material; forming a plurality of second trenches on a second side of the wafer, wherein the first trenches are at least generally aligned with the second trenches along the lanes; filling at least a portion of the second trenches with the protective material; and cutting through the wafer along the lanes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing semiconductor components, comprising:
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depositing a first protective material on a first side of a semiconductor wafer having a plurality of dies, wherein the first protective material flows into first trenches in lanes between the dies on the first side of the wafer; depositing a second protective material on a second side of the wafer, wherein the second protective material flows into second trenches in the second side of the wafer that are aligned with the first trenches in the lanes; and separating the wafer along the lanes. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of manufacturing semiconductor components, comprising:
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mounting conductive balls to die contacts connected to integrated circuits of dies on a semiconductor wafer, wherein the die contacts are at a first side of the wafer; cutting first trenches into the first side of the wafer along lanes adjacent to the dies, wherein the first trenches have a first depth into the wafer; molding a polymeric material onto the first side and into the first trenches; thinning the wafer to a second side opposite the first side; cutting second trenches into the second side of the wafer after the thinning procedure, wherein the second trenches are aligned with the first trenches along the lanes; molding the polymeric material onto the second side and into the second trenches; and cutting the wafer along the dicing lanes, wherein cutting the wafer forms individual components that have a first exterior cover at the first side with a first extension extending toward the second side, a second exterior cover at the second side with a second extension extending toward the first side, and a sidewall between the first and second sides, wherein the sidewall includes an exterior portion of the first extension, an exterior portion of the second extension, and an exposed portion of the semiconductor wafer between the first and second extensions. - View Dependent Claims (17, 18, 19)
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20. A semiconductor component, comprising:
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a die having a semiconductor substrate and an integrated circuit, wherein the substrate has a first side, a second side, a sidewall between the first and second sides, a first indentation at the sidewall around a periphery of the first side, and a second indentation at the sidewall around a periphery of the second side; a first exterior cover at the first side, the first exterior cover having a first extension in the first indentation; and a second exterior cover at the second side, the second exterior cover having a second extension in the second indentation, and wherein the first and second extensions are spaced apart from each other by an exposed portion of the sidewall. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27)
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28. A semiconductor component, comprising:
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a die having a semiconductor substrate with a front surface, a back surface, and a sidewall between the front surface and the back surface, wherein the sidewall has a shoulder projecting outwardly; a first polymeric cover having a front portion covering the front surface and a first extension projecting from the front portion to the shoulder; and a second polymeric cover having a back portion covering the back surface and a second extension projecting from the back portion to the shoulder, wherein the shoulder separates the first extension from the second extension. - View Dependent Claims (29, 30)
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31. A semiconductor apparatus, comprising:
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a semiconductor wafer having a plurality of dies with integrated circuits, a first side, a plurality of first channels in the first side located in lanes between the dies, a second side, and a plurality of second channels in the second side in the lanes; a first polymeric material on the first side, wherein a portion of the first polymeric material is in the first channels; and a second polymeric material on the second side, wherein a portion of the second polymeric material is in the second channels. - View Dependent Claims (32, 33, 34, 35, 36)
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37. A system, comprising:
at least one of a processor and memory device, and wherein at least one of the processor and the memory device includes a semiconductor component comprising — a die having a semiconductor substrate and an integrated circuit, wherein the substrate has a first side, a second side, a sidewall between the first and second sides, a first indentation at the sidewall around a periphery of the first side, and a second indentation at the sidewall around a periphery of the second side; a first protective component at the first side, the first protective component having a first extension in the first indentation; and a second protective component at the second side, the second protective component having a second extension in the second indentation, and wherein the first and second extensions are spaced apart from each other by an exposed portion of the sidewall.
Specification