METHODS FOR FORMING A RUTHENIUM-BASED FILM ON A SUBSTRATE

• US 20080214003A1
• Filed: 02/21/2008
• Published: 09/04/2008
• Est. Priority Date: 02/21/2007
• Status: Active Grant

• Current Assignee: Ashutosh Misra, Bin Xia
• Original Assignee: Ashutosh Misra, Bin Xia
• Inventors: Misra, Ashutosh, XIA, Bin
• Granted Patent: US 7,906,175 B2
• Time in Patent Office: Days
• US Class Current: 438/686
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence

Abstract

Methods for forming a film on a substrate in a semiconductor manufacturing process A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Claims

1. A method for forming a film on a substrate in a semiconductor manufacturing process, comprising:

a) providing a reaction chamber, and a substrate contained within the chamber;

b) providing a ruthenium based precursor, wherein the precursor comprises;

1) a mixture of at least two non-flammable fluorinated solvents, each solvent having the general formula C_xH_yF_zO_tN_u, wherein;

x≧

3;

 

 

i)

y+z≦

2×

+2;

 

 

ii)

z≧

1;

 

 

iii)

t≧

0;

 

 

iv)

u≧

0; and

 

 

v)

t+u≧

0; and

 

 

vi)

wherein x, y, z, t, and u are all integers;

2) ruthenium tetroxide dissolved in the solvent mixture;

and

3) less than about 100 ppm of moisture; and

c) depositing a ruthenium containing film on the substrate.

2. The method of claim 1, wherein the solvent mixture comprises a mixture of methyl nonafluorobutyl ether and ethyl nonafluorobutyl ether.

3. The method of claim 2, wherein the solvent mixture comprises:

a) between about 10% and about 90%, by volume, of methyl nonafluorobutyl ether; and

b) between about 10% and about 90%, by volume, of ethyl nonafluorobutyl ether.

4. The method of claim 3, wherein the solvent mixture comprises:

a) about 30%, by volume, of methyl nonafluorobutyl ether; and

b) about 70%, by volume, of ethyl nonafluorobutyl ether.

5. The method of claim 1, wherein the precursor comprises less than about 1 ppm of moisture.

6. The method of claim 1, wherein the precursor further comprises less than about 1 ppm of unassociated oxygen.

7. The method of claim 1, wherein the pressure in the reaction chamber is maintained between 0.01 torr and 1000 torr.

8. The method of claim 1, wherein the film deposition step is carried out at a substrate temperature between 50°

C. to 800°

C.

9. The method of claim 8, wherein the film deposition step is carried out at a substrate temperature between about 100°

C. and about 600 °

C.

10. The method of claim 1, further comprising introducing a gaseous reducing agent into the reaction chamber and depositing a ruthenium containing film on the substrate at least partly by reacting the precursor with the gaseous reducing agent.

11. The method of claim 10, wherein the reducing agent is hydrogen.

12. The method of claim 10, wherein the reducing agent is air or oxygen.

13. The method of claim 10, further comprising introducing the reducing agent and the precursor into the chamber simultaneously.

14. The method of claim 1, further comprising

a) introducing the precursor into a vaporizer, wherein the precursor is initially in a liquid state;

b) vaporizing the precursor to form a precursor that is at least partially in a vapor state; and

c) introducing the vapor state precursor into the reaction chamber.

15. The method of claim 14, further comprising introducing the liquid state precursor into the vaporizer by pressurizing the liquid state precursor with an inert gas.

16. The method of claim 14, further comprising vaporizing at least about 99% of the liquid state precursor.

17. The method of claim 14, wherein the entire liquid state precursor is vaporized to form the vapor state precursor.

18. The method of claim 14, further comprising vaporizing the precursor at a temperature between about 10°

C. and about 80°

C.

19. The method of claim 1, wherein the substrate is a silicon substrate suitable for semiconductor manufacturing.

20. The method of claim 1, wherein the substrate is a ceramic-based material.