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METHODS FOR FORMING A RUTHENIUM-BASED FILM ON A SUBSTRATE

  • US 20080214003A1
  • Filed: 02/21/2008
  • Published: 09/04/2008
  • Est. Priority Date: 02/21/2007
  • Status: Active Grant
First Claim
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1. A method for forming a film on a substrate in a semiconductor manufacturing process, comprising:

  • a) providing a reaction chamber, and a substrate contained within the chamber;

    b) providing a ruthenium based precursor, wherein the precursor comprises;

    1) a mixture of at least two non-flammable fluorinated solvents, each solvent having the general formula CxHyFzOtNu, wherein;


    x≧

    3;





    i)
    y+z≦



    +2;





    ii)
    z≧

    1;





    iii)
    t≧

    0;





    iv)
    u≧

    0; and





    v)
    t+u≧

    0; and





    vi)wherein x, y, z, t, and u are all integers;

    2) ruthenium tetroxide dissolved in the solvent mixture;

    and3) less than about 100 ppm of moisture; and

    c) depositing a ruthenium containing film on the substrate.

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