METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate with an active region and a margin region bordering on the active region;
a spacer layer in the margin region is broken through at a selected location and at least part of the spacer layer is removed in the active region; and
wherein the location is selected such that at least part of a semiconductor mesa structure is exposed and the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate.
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Abstract
A method for manufacturing a semiconductor device and semiconductor device. One embodiment provides a semiconductor substrate with an active region and a margin region bordering on the active region. The spacer layer in the margin region is broken through at a selected location and at least part of the spacer layer is removed in the active region using a common process. The location is selected such that at least part of the semiconductor mesa structure is exposed and the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate.
7 Citations
25 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate with an active region and a margin region bordering on the active region; a spacer layer in the margin region is broken through at a selected location and at least part of the spacer layer is removed in the active region; and wherein the location is selected such that at least part of a semiconductor mesa structure is exposed and the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate with an active region and a margin region bordering on the active region, wherein the active region comprises trenches filled with conductive material in the semiconductor substrate; and breaking through a spacer layer having varying thickness, in the margin region at a selected location and removing at least part of the spacer layer in the active region; and selecting the location such that, on condition that the spacer layer in the active region is removed such that at least part of the semiconductor mesa structure is exposed and the conductive material in the trenches is not exposed, the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate. - View Dependent Claims (6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate with an active region and a margin region bordering on the active region, wherein the active region comprises trenches filled with conductive material in the semiconductor substrate, wherein the conductive material in the trenches is insulated from the semiconductor substrate by an insulation layer, and wherein a semiconductor mesa structure is formed between each two trenches, wherein a layer of the conductive material, insulated from the semiconductor substrate by an insulation layer and short-circuited with the conductive material in the trenches, is formed in the margin region, and wherein a spacer layer comprising a varying thickness in the margin region is formed over the semiconductor substrate; and breaking through the spacer layer in the margin region at a selected location and removing at least part of the spacer layer in the active region, using a common process, wherein the location is selected such that, on condition that the spacer layer in the active region is removed such that at least part of the semiconductor mesa structure is exposed and the conductive material in the trenches is not exposed, the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a semiconductor substrate with an active region and a margin region bordering on the active region, wherein the active region comprises trenches filled with conductive material in the semiconductor substrate, wherein the conductive material in the trenches is insulated from the semiconductor substrate by an insulation layer, and wherein a semiconductor mesa structure is formed between each two trenches, wherein a contact patterning comprising a contact layer insulated from the semiconductor substrate is provided in the margin region, wherein a spacer layer with a thickness varying from location to location is formed over the contact layer, wherein the spacer layer, at one location in the margin region, is broken through at least to the contact layer; and wherein the contact patterning is formed such that a thickness of the spacer layer at the location is, within a tolerance range, smaller than or equal to a thickness of the spacer layer in a region in which a contact of the semiconductor mesa structure in the active region is laterally bounded. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
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a semiconductor substrate with an active region and a margin region bordering on the active region; means for providing a spacer layer in the margin region is broken through at a selected location and at least part of the spacer layer is removed in the active region; and wherein the location is selected such that at least part of a semiconductor mesa structure is exposed and the spacer layer in the margin region is broken through to the conductive layer and not to the semiconductor substrate.
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Specification