METHODS OF USING CORROSION-INHIBITING CLEANING COMPOSITIONS FOR METAL LAYERS AND PATTERNS ON SEMICONDUCTOR SUBSTRATES

• US 20080214006A1
• Filed: 05/16/2008
• Published: 09/04/2008
• Est. Priority Date: 02/10/2004
• Status: Abandoned Application

• Current Assignee: Byoung-Moon Yoon, Byung-Mook Kim, Hyuk-Jin Lee, In-Seak Hwang, Kwang-Wook Lee, Ky-Sub Kim, Kyung-Hyun Kim, Sun-Young Song, Yong-Sun Ko
• Original Assignee: Byoung-Moon Yoon, Byung-Mook Kim, Hyuk-Jin Lee, In-Seak Hwang, Kwang-Wook Lee, Ky-Sub Kim, Kyung-Hyun Kim, Sun-Young Song, Yong-Sun Ko
• Inventors: Kim, Kyung-Hyun, Yoon, Byoung-Moon, Ko, Yong-Sun, Kim, Ky-Sub, Hwang, In-Seak, Lee, Kwang-Wook, Song, Sun-Young, Lee, Hyuk-Jin, Kim, Byung-Mook
• Application Number:
  US12/122,264
• Publication Number:
  US 20080214006A1
• Time in Patent Office: Days
• US Class Current: 438/692
• CPC Class Codes: C11D 11/0047 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/0073 Anticorrosion compositions
• CPC Class Codes: C11D 3/042 Acids
• CPC Class Codes: C11D 3/046 Salts
• CPC Class Codes: C11D 3/2082 Polycarboxylic acids-salts thereof
• CPC Class Codes: C11D 3/30 Amines; Substituted amines ; Quaternized amines
• CPC Class Codes: C11D 3/364 containing nitrogen
• CPC Class Codes: C11D 3/39 Organic or inorganic per-compounds
• CPC Class Codes: C11D 3/3947 Liquid compositions
• CPC Class Codes: C23G 1/106 refractory metals
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers

Abstract

Provided herein are methods for using corrosion-inhibiting cleaning compositions for semiconductor wafer processing that include an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.

Claims

1. A method of forming an integrated circuit device, comprising the steps of:

forming a gate oxide layer on an integrated circuit substrate;

forming a tungsten metal layer on the gate oxide layer;

patterning the tungsten metal layer and gate oxide layer to define a tungsten-based insulated gate electrode; and

exposing the patterned tungsten metal layer to a cleaning solution comprising a surfactant, a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids, first and second oxide etchants, a metal etchant and deionized water.

2. The method of claim 1, wherein a quantity of the corrosion-inhibiting compound in the cleaning solution is in a range from about 0.0001 wt % to about 0.1 wt %;

wherein a quantity of the surfactant in the cleaning solution is in a range from about 0.001 wt % to about 1.0 wt %; and

wherein the first oxide etchant is sulfuric acid, the second oxide etchant is a fluoride and the metal etchant is a peroxide.

3. The method of claim 2, wherein a quantity of the sulfuric acid in the cleaning solution is in a range from about 0.05 wt % to about 15 wt %;

and wherein a quantity of the peroxide in the cleaning solution is in a range from about 0.5 wt % to about 15 wt %.

4. The method of claim 3, wherein the peroxide is hydrogen peroxide (H₂O₂) and the fluoride is hydrogen fluoride (HF).

5. A method of forming a memory device, comprising the steps of:

forming an interlayer dielectric layer on an integrated circuit substrate;

forming an interconnect opening in the interlayer dielectric layer;

filling the interconnect opening with a conductive plug;

forming a bit line node electrically coupled to the conductive plug;

exposing the bit line node to a cleaning solution comprising a surfactant, a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids, first and second oxide etchants, a metal etchant and deionized water.

6. The method of claim 5, wherein a quantity of the corrosion-inhibiting compound in the cleaning solution is in a range from about 0.0001 wt % to about 0.1 wt %;

wherein a quantity of the surfactant in the cleaning solution is in a range from about 0.001 wt % to about 1.0 wt %; and

wherein the first oxide etchant is sulfuric acid, the second oxide etchant is a fluoride and the metal etchant is a peroxide.

7. The method of claim 6, wherein a quantity of the sulfuric acid in the cleaning solution is in a range from about 0.05 wt % to about 15 wt %;

and wherein a quantity of the peroxide in the cleaning solution is in a range from about 0.5 wt % to about 15 wt %.

8. The method of claim 7, wherein the peroxide is hydrogen peroxide (H₂O₂) and the fluoride is hydrogen fluoride (HF).

9. A method of forming an integrated circuit device, comprising the steps of:

forming a gate oxide layer on an integrated circuit substrate;

forming a tungsten metal layer on the gate oxide layer;

patterning the tungsten metal layer and gate oxide layer to define a tungsten-based insulated gate electrode; and

exposing the patterned tungsten metal layer to a cleaning solution consisting essentially of a surfactant, a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids, hydrogen fluoride, hydrogen peroxide, sulfuric acid and deionized water.