SUBSTRATE PROCESSING APPARATUS

• US 20080216742A1
• Filed: 03/06/2008
• Published: 09/11/2008
• Est. Priority Date: 03/09/2007
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: TAKEBAYASHI, Yuji
• Granted Patent: US 8,012,259 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45546 specially adapted for a substrate stack in the ALD reactor
• CPC Class Codes: C23C 16/45591 Fixed means, e.g. wings, baffles
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: H01L 21/67309 characterized by the substrate support

Abstract

A substrate processing apparatus having a support for holding a wafer, a processing chamber for accommodating the wafer, a gas supply hole for supplying desired processing gas in a parallel direction to the surface to be processed of the wafer to be accommodated in said processing chamber, an adjustment plate to be arranged with facing the surface to be processed of the wafer accommodated in the foregoing processing chamber, and an exhaust means for exhausting atmosphere in said processing chamber. A substrate processing apparatus wherein distance between the surface to be processed of wafer and the center part of the adjustment plate is narrower than distance between the surface to be processed of wafer and the circumference part and the midway part of the adjustment plate, in a direction perpendicular to a supply direction of processing gas.

Claims

1. A substrate processing apparatus comprising;

a substrate hold unit for holding a substrate,

a processing chamber for accommodating said substrate and said substrate hold unit,

a supply unit for supplying desired processing gas in a parallel direction to the surface to be processed of said substrate,

a member to be arranged with facing the surface to be processed of said substrate to be accommodated in said processing chamber, and

an exhaust unit for exhausting atmosphere in said processing chamber,

wherein a distance between the surface to be processed of said substrate to be accommodated in said processing chamber, and the center part of said member is narrower than a distance between the surface to be processed of said substrate to be accommodated in said processing chamber, and a part other than the center part of said member, in a direction perpendicular to a supplying direction of said processing gas.

2. The substrate processing apparatus according to claim 1, wherein said member is a circular shape, and is configured by a ring-like circumference part having whose distance between the surface to be processed of said substrate is wider than distance between said center part and the surface to be processed of said substrate, and a ring-like midway part having whose distance between the surface to be processed of said substrate becomes narrower from said circumference part toward said center part.

3. The substrate processing apparatus according to claim 1, wherein said member is a circular shape, and is configured by a ring-like circumference part having whose distance between the surface to be processed of said substrate becomes narrower toward said center part.

4. The substrate processing apparatus according to claim 1, wherein said member is a circular shape, and a first surface facing the surface to be processed of said substrate, at said center part, and a second surface facing the surface to be processed of said substrate, at a part other than said center part, are parallel each other.

7. The substrate processing apparatus according to claim 1, wherein pins for supporting the substrate are installed on the upper surface of said member.

9. The substrate processing apparatus according to claim 1, wherein said member is configured slidably along a longitudinal direction of said processing chamber.

11. The substrate processing apparatus according to claim 1, wherein said member is configured so that height position in said processing chamber can be changed.

13. The substrate processing apparatus according to claim 1, wherein said member is configured by a dielectric substance.

15. The substrate processing apparatus according to claim 1, wherein said processing chamber comprising:

an outer tube, and

an inner tube which is installed inside said outer tube, and at least the lower end side is opened, where a plurality of substrates are held and accommodated by the substrate hold unit,

wherein said gas supply unit has a gas nozzle, which has a plurality of gas supply holes, installed inside said inner tube, so as to extend in a lamination direction of said multiple pieces of substrates,

still more said processing chamber has a plurality of exhaust ports installed at said inner tube, at a position facing said gas nozzle, with sandwiching said substrate, and

one sheet of said member per one sheet of the substrate is installed facing the surface to be processed of said substrate.

17. The substrate processing apparatus according to claim 1, wherein a plurality of the substrates are held by the substrate hold unit and accommodated in said processing chamber, said exhaust unit is connected to the lower part of said processing chamber, and said member is installed with facing the surface to be processed of said substrate to a substrate arranged at the lower side of said processing chamber.

5. A substrate processing apparatus comprising:

a substrate hold unit for holding a substrate;

a processing chamber for accommodating said substrate and said substrate hold unit;

a supply unit for supplying desired processing gas in a parallel direction to the surface to be processed of said substrate;

a member to be arranged with facing the surface to be processed of said substrate to be accommodated in said processing chamber; and

an exhaust unit for exhausting atmosphere of the inside of said processing chamber,

wherein said member has a circumference part, which is a ring-like site, and a center part, which is a disk-shaped site having a plurality of through holes independent from said circumference part, and

said circumference part and said center part are connected by a plurality of junction parts, which are linear sites extending in a diameter direction.

6. The substrate processing apparatus according to claim 5, wherein said member is flat plate-shaped.

8. The substrate processing apparatus according to claim 5, wherein pins for supporting the substrate are installed on the upper surface of said member.

10. The substrate processing apparatus according to claim 5, wherein said member is configured slidably along a longitudinal direction of said processing chamber.

12. The substrate processing apparatus according to claim 5, wherein said member is configured so that height position in said processing chamber can be changed.

14. The substrate processing apparatus according to claim 5, wherein said member being configured by a dielectric substance.

16. The substrate processing apparatus according to claim 5, wherein said processing chamber comprising:

an outer tube; and

an inner tube installed inside said outer tube, and at least the lower end side is opened, where a plurality of the substrates are held and accommodated by the substrate hold unit,

wherein said gas supply unit has a gas nozzle, which has a plurality of gas supply holes, installed inside said inner tube, so as to extend in a lamination direction of said multiple pieces of substrates,

still more said processing chamber has a plurality of exhaust ports installed at said inner tube, at a position facing said gas nozzle, with sandwiching said substrate, and

one sheet of said member per one sheet of the substrate is installed facing the surface to be processed of said substrate.

18. The substrate processing apparatus according to claim 5, wherein a plurality of the substrates is held by the substrate hold unit, and accommodated in said processing chamber, said exhaust unit is connected to the lower part of said processing chamber, and said member is installed with facing the surface to be processed of said substrate to a substrate arranged at the lower side of said processing chamber.