Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same

• US 20080216958A1
• Filed: 03/07/2007
• Published: 09/11/2008
• Est. Priority Date: 03/07/2007
• Status: Abandoned Application

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: CHEUNG, David, GOTO, Haruhiro Harry, FAIR, James A.
• Application Number:
  US11/683,124
• Publication Number:
  US 20080216958A1
• Time in Patent Office: Days
• US Class Current: 156/345.35
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 18/1216 Metal oxides C23C18/1212 takes precedence
• CPC Class Codes: C23C 18/1291 by heating of the substrate
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

Plasma reaction apparatus having pre-seasoned showerheads and methods for pre-seasoning a showerhead of a plasma reaction apparatus are provided. In an embodiment, a method for seasoning a showerhead prior to installation in a plasma reaction apparatus comprises cleaning the showerhead, positioning the showerhead in a deposition chamber, and forming a continuous, substantially uniform protective layer on the showerhead.

Claims

1. A method for seasoning a showerhead prior to installation in a plasma reaction apparatus, the method comprising the steps of:

cleaning the showerhead;

positioning the showerhead in a deposition chamber; and

forming a continuous, substantially uniform protective layer on the showerhead.

2. The method of claim 1, wherein the step of forming a continuous, substantially uniform protective layer on the showerhead comprises the step of forming a layer of material on the showerhead wherein the material is selected from the group consisting of silicon oxide (SiO₂), aluminum oxide (Al₂O₃), aluminum nitride (AlN), boron nitrate (BNO₃), aluminum fluoride (AlF), silicon nitride (Si₃N₄), titanium oxide (TiO), boron nitride (BN), boron oxide (B₂O₃), yttrium oxide (Y₂O₃), indium tin oxide (InSnO).

3. The method of claim 1, wherein the step of forming a continuous, substantially uniform protective layer on the showerhead comprises the step of forming a protective layer having a thickness in the range of about 0.001 μ

m to about 50 μ

m.

4. The method of claim 3, wherein the step of the step of forming a protective layer having a thickness in the range of about 0.001 μ

m to about 50 μ

m comprises the step of forming a protective layer having a thickness in the range of about 0.01 μ

m to about 5 μ

m.

5. The method of claim 1, wherein the step of forming a continuous, substantially uniform protective layer on the showerhead comprises the steps of depositing a silicon layer on the showerhead and oxidizing the silicon layer.

6. The method of claim 5, wherein the step of oxidizing the silicon layer comprise the step of exposing the silicon layer to an oxygen-based plasma.

7. The method of claim 5, wherein the step of oxidizing the silicon layer comprise the step of heating the silicon layer in an oxygen environment.

8. The method of claim 1, wherein the step of positioning the showerhead in a deposition chamber comprises the step of positioning the showerhead in the deposition chamber of a plasma-enhanced chemical vapor deposition apparatus.

9. The method of claim 1, wherein the step of positioning the showerhead in a deposition chamber comprises the step of positioning the showerhead in the deposition chamber of a physical vapor deposition apparatus.

10. The method of claim 1, wherein the step of positioning the showerhead in a deposition chamber comprises the step of positioning the showerhead in the deposition chamber of a chemical vapor deposition apparatus.

11. A method for fabricating a plasma reaction apparatus, the method comprising the steps of:

pre-seasoning a showerhead; and

installing the showerhead into the plasma reaction apparatus.

12. The method of claim 11, wherein the step of pre-seasoning a showerhead comprises the step of forming a protective layer on the showerhead.

13. The method of claim 12, wherein the step of forming a protective layer on the showerhead comprises the step of forming a layer of material on the showerhead wherein the material is selected from the group consisting of silicon oxide (SiO₂), aluminum oxide (Al₂O₃), aluminum nitride (AlN), boron nitrate (BNO₃), aluminum fluoride (AlF), silicon nitride (Si₃N₄), titanium oxide (TiO), boron nitride (BN), boron oxide (B₂O₃), yttrium oxide (Y₂O₃), indium tin oxide (InSnO).

14. The method of claim 12, wherein the step of forming a protective layer on the showerhead comprises the step of forming a protective layer having a substantially uniform thickness in the range of about 0.001 μ

m to about 50 μ

m.

15. The method of claim 14, wherein the step of the step of forming a protective layer having a substantially uniform thickness in the range of about 0.001 μ

m to about 50 μ

m comprises the step of forming a protective layer having a substantially uniform thickness in the range of about 0.01 μ

m to about 5 μ

m.

16. The method of claim 12, wherein the step of forming a protective layer on the showerhead comprises the steps of depositing a silicon layer on the showerhead and oxidizing the silicon layer.

17. The method of claim 11, wherein the step of pre-seasoning a showerhead comprises the step of pre-seasoning the showerhead in a deposition chamber of a plasma-enhanced chemical vapor deposition apparatus.

18. The method of claim 11, wherein the step of pre-seasoning a showerhead comprises the step of pre-seasoning the showerhead in a deposition chamber of a physical vapor deposition apparatus.

19. The method of claim 11, wherein the step of pre-seasoning a showerhead comprises the step of pre-seasoning the showerhead in a deposition chamber of a chemical vapor deposition apparatus.

20. A plasma reaction apparatus comprising:

a container configured for gas flow therethrough and having an inlet end and an outlet end and further configured for ionization of a portion of at least one component of a gas flowing therethrough;

a coil surrounding the container;

an RF generator coupled to the coil;

a processing chamber coupled to the outlet end of the container; and

a pre-seasoned showerhead disposed between the container and the processing chamber.

21. The plasma reaction apparatus of claim 20, wherein the pre-seasoned showerhead has a protective layer disposed thereon and wherein the protective layer comprises a material selected from the group consisting of silicon oxide (SiO₂), aluminum oxide (Al₂O₃), aluminum nitride (AlN), boron nitrate (BNO₃), aluminum fluoride (AlF), silicon nitride (Si₃N₄), titanium oxide (TiO), boron nitride (BN), boron oxide (B₂O₃), yttrium oxide (Y₂O₃), indium tin oxide (InSnO).

22. The plasma reaction apparatus of claim 21, wherein the protective layer has a substantially uniform thickness in the range of about 0.001 μ

m to about 50 μ

m.

23. The plasma reaction apparatus of claim 22, wherein the protective layer has a substantially uniform thickness in the range of about 0.01 μ

m to about 5 μ

m.