Semiconductor inspection system and apparatus utilizing a non-vibrating contact potential difference sensor and controlled illumination
First Claim
1. A method of detecting non-uniformities of a semiconductor wafer, comprising the steps of:
- providing a semiconductor comprising a wafer having a wafer surface;
providing a contact potential difference sensor having a probe tip;
providing a source of illumination energy in communication with the wafer surface;
providing a mechanism providing variable illumination;
directing the illumination energy at an area of the wafer surface that includes a sampling area located in proximity with the contact potential difference sensor probe tip;
scanning the wafer surface laterally relative to the contact potential difference sensor while the surface of the semiconductor is illuminated;
generating sensor data representative of changes in the contact potential difference between the sensor probe tip and the wafer surface as the sensor probe tip scans laterally across the wafer surface; and
processing the contact potential difference sensor data to detect a pattern that represents a non-uniformity,wherein the non-uniformity is selected from the group consisting of chemical non-uniformities, physical non-uniformities, electrical non-uniformities, and combinations thereof.
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Accused Products
Abstract
A method and system for identifying a defect or contamination on the surface of a semiconductor or in a semiconductor. The method and system involves providing a semiconductor with a surface, such as a semiconductor wafer, providing a non-vibrating contact potential difference sensor, providing a source of illumination with controllable intensity or distribution of wavelengths, using the illumination source to provide controlled illumination of the surface of the wafer under or near the non-vibrating contact potential sensor probe tip, using the non-vibrating contact potential difference sensor to scan the wafer surface during controlled illumination, generating data representative of changes in contact potential difference across the wafer surface, and processing that data to identify a pattern characteristic of a defect or contamination.
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Citations
29 Claims
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1. A method of detecting non-uniformities of a semiconductor wafer, comprising the steps of:
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providing a semiconductor comprising a wafer having a wafer surface; providing a contact potential difference sensor having a probe tip; providing a source of illumination energy in communication with the wafer surface; providing a mechanism providing variable illumination; directing the illumination energy at an area of the wafer surface that includes a sampling area located in proximity with the contact potential difference sensor probe tip; scanning the wafer surface laterally relative to the contact potential difference sensor while the surface of the semiconductor is illuminated; generating sensor data representative of changes in the contact potential difference between the sensor probe tip and the wafer surface as the sensor probe tip scans laterally across the wafer surface; and processing the contact potential difference sensor data to detect a pattern that represents a non-uniformity, wherein the non-uniformity is selected from the group consisting of chemical non-uniformities, physical non-uniformities, electrical non-uniformities, and combinations thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A system for detecting non-uniformities of a semiconductor wafer, comprising:
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a semiconductor mounting surface adapted to receive a semiconductor wafer having a wafer surface; a contact potential difference sensor having a probe tip and positionable adjacent to the mounted semiconductor wafer, the sensor and the semiconductor wafer movable relative to each other; a source of illumination energy in communication with the surface, the source of illumination energy providing directable and variable illumination energy; the sensor generating contact potential difference data as the sensor probe tip scans laterally across the semiconductor surface while an area of the wafer surface that includes a sampling area located in proximity with the contact potential difference sensor probe tip is illuminated by the illumination source of illumination energy; and a processor for receiving the contact potential difference sensor data from the sensor and processing the data to detect a pattern that represents a non-uniformity. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification