CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD

• US 20080217554A1
• Filed: 03/05/2008
• Published: 09/11/2008
• Est. Priority Date: 03/09/2007
• Status: Active Grant

• Current Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Original Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Inventors: ABE, Takayuki
• Granted Patent: US 7,928,414 B2
• Time in Patent Office: Days
• US Class Current: 250/398
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 1/20 Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• CPC Class Codes: H01J 2237/0453 multiple apertures
• CPC Class Codes: H01J 37/09 Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

A charged particle beam writing apparatus includes an irradiation part configured to irradiate a charged particle beam; a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam; a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member; a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed.

Claims

1. A charged particle beam writing apparatus, comprising:

an irradiation part configured to irradiate a charged particle beam;

a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam;

a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member;

a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and

a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed.

2. The charged particle beam writing apparatus according to claim 1, wherein a plurality of openings formed in the first shaping aperture member as passing areas.

3. The charged particle beam writing apparatus according to claim 2, wherein the plurality of openings are formed with parallel edges facing each other.

4. The charged particle beam writing apparatus according to claim 2, wherein each of the plurality of openings is formed in a quadrangular shape.

5. The charged particle beam writing apparatus according to claim 4, wherein the plurality of openings are formed with parallel edges facing each other.

6. The charged particle beam writing apparatus according to claim 2, wherein each of the plurality of openings is formed in a trapezoid shape.

7. The charged particle beam writing apparatus according to claim 6, wherein the plurality of openings are formed with parallel edges facing each other.

8. The charged particle beam writing apparatus according to claim 1, wherein portions of the passing areas are connected.

12. The charged particle beam writing apparatus according to claim 2, wherein at least one of the plurality of openings is an opening extending by changing a direction thereof at some midpoint.

13. The charged particle beam writing apparatus according to claim 1, wherein an opening is formed using a curve in at least one of the first shaping aperture member and the second shaping aperture member as the passing are.

9. A charged particle beam writing method comprising:

writing first and second patterns placed side by side with predetermined spacing by using first and second shaping aperture members in which openings, that a charged particle beam passes through, are formed on both sides of an area blocking the charged particle beam; and

writing a third pattern to be connected to the second pattern by using the first and second shaping aperture members, between both sides of the second pattern, on the side opposite to the first pattern.

10. A charged particle beam writing method comprising:

writing a first pair of patterns placed side by side with first spacing by using first and second shaping aperture members in which openings, that a charged particle beam passes through, are formed on both sides of an area blocking the charged particle beam; and

writing a second pair of patterns placed side by side with second spacing and connected to the first pair of patterns by using the first and second shaping aperture members.

11. The charged particle beam writing method according to claim 10, wherein the second pair of patterns is connected, among ends of the first pair of patterns, to ends in a direction perpendicular to the direction in which the first pair of patterns is placed side by side.