Semiconductor Light Emitting Device and Fabrication Method Thereof

• US 20080217638A1
• Filed: 07/25/2006
• Published: 09/11/2008
• Est. Priority Date: 07/25/2005
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Choi, Jin Sik
• Granted Patent: US 8,742,429 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, a second electrode formed on the second semiconductor layer, and a first electrode formed under the first semiconductor layer.

Claims

1. A semiconductor light emitting device comprising.

a first semiconductor layer having a bottom surface with uneven patterns;

an active layer formed on the first semiconductor layer;

a second semiconductor layer formed on the active layer;

a second electrode formed on the second semiconductor layer; and

a first electrode formed under the first semiconductor layer.

2. The semiconductor light emitting device according to claim 1, wherein the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer.

3. The semiconductor light emitting device according to claim 1, wherein the uneven patterns of the first semiconductor layer are formed at regular intervals.

4. The semiconductor light emitting device according to claim 1, wherein the uneven patterns of the first semiconductor layer are formed at different intervals.

5. The semiconductor light emitting device according to claim 1, wherein at least the first electrode is formed over the entire surface of the first semiconductor layer, or at least the second electrode is formed over the entire surface of the second semiconductor layer.

6. The semiconductor light emitting device according to claim 1, wherein at least one of the first and second electrode is a transparent electrode.

7. The semiconductor light emitting device according to claim 1, further comprising a third semiconductor layer formed between the second semiconductor layer and the second electrode.

8. The semiconductor light emitting device according to claim 7, wherein the first and third semiconductor layers are n-type semiconductor layers, and the second semiconductor layer is a p-type semiconductor layer.

9. The semiconductor light emitting device according to claim 1, further comprising a buffer layer formed between a convex portion of the uneven patterns of the first semiconductor layer and the first electrode.

10. A method for fabricating a semiconductor light emitting device, the method comprising:

forming a first semiconductor layer on a substrate;

forming an active layer on the first semiconductor layer;

forming a second semiconductor layer on the active layer;

removing the substrate;

forming uneven patterns in the first semiconductor layer; and

forming a first electrode on the first semiconductor layer, and forming a second electrode on the second semiconductor layer.

11. The method according to claim 10, wherein the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer.

12. The method according to claim 10, wherein the uneven patterns of the first semiconductor layer are formed at regular intervals.

13. The method according to claim 10, wherein the uneven patterns of the first semiconductor layer are formed at different intervals.

14. The method according to claim 10, wherein at least the first electrode is formed over the entire surface of the first semiconductor layer, or at least the second electrode is formed over the entire surface of the second semiconductor layer.

15. The method according to claim 10, wherein the removing of the substrate comprises separating and removing the substrate using a laser lift-off method.

16. The method according to claim 15, wherein the laser lift-off method uses an eximer laser.

17. The method according to claim 10, wherein the forming of the uneven patterns in the first semiconductor layer comprises:

forming a photoresist layer on the first semiconductor layer and patterning the photoresist layer;

performing etching on the patterned photoresist layer to form uneven patterns in the first semiconductor layer; and

removing the photoresist layer.

18. The method according to claim 10, further comprising, before the forming of the first semiconductor layer on the substrate, forming a buffer layer on the substrate.

19. The method according to claim 18, further comprising, after the removing of the substrate, removing the buffer layer to expose the first semiconductor layer.

20. The method according to claim 19, wherein the removing of the buffer layer comprises removing the buffer layer using one of chemical mechanical polishing and etching.

21. The method according to claim 18, further comprising, after the removing of the substrate, etching the buffer layer and the first semiconductor layer to form uneven patterns in the first semiconductor layer, wherein the buffer layer is formed on a convex portion of the uneven patterns of the first semiconductor layer.