Semiconductor Light emitting device, LED package using the same, and method for fabricating the same

• US 20080217640A1
• Filed: 03/10/2008
• Published: 09/11/2008
• Est. Priority Date: 03/08/2007
• Status: Abandoned Application

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Nakamura, Yoshihiro, Suzuki, Naoto, Yasuda, Yoshiaki
• Application Number:
  US12/075,245
• Publication Number:
  US 20080217640A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A semiconductor light emitting device is provided which can prevent the reflectance of a metal film from deteriorating due to heat aging and can prevent wire bonding performance of the semiconductor light emitting element from deteriorating due to the diffusion of Ni contained in a Ni barrier metal layer to the reflection layer during die-bonding of the semiconductor light emitting element. The semiconductor light emitting device includes a metal film formed on a substrate and a semiconductor light emitting element. The metal film includes a barrier metal layer configured to prevent a predetermined material from being diffused into the substrate, a metal layer formed on the barrier metal layer; and a reflection layer formed on the metal layer. The reflection layer is configured to reflect light emitted from the semiconductor light emitting element, and the metal layer is made of Ti or Pd.

Claims

1. A semiconductor light emitting device, comprising:

a substrate;

a metal film deposited on the substrate; and

a semiconductor light emitting element,

wherein the metal film comprises;

a barrier metal layer configured to prevent a predetermined material from being diffused into the substrate;

a metal layer consisting essentially of Ti or Pd; and

a reflection layer configured to reflect light emitted from the semiconductor light emitting element,

wherein the barrier metal layer, the metal layer, and the reflection layer are deposited in this order from the substrate.

2. The semiconductor light emitting device according to claim 1, wherein the barrier metal layer consists essentially of Ni.

3. The semiconductor light emitting device according to claim 1, wherein the reflection layer consists essentially of Ag or an Ag alloy.

4. The semiconductor light emitting device according to claim,2, wherein the reflection layer consists essentially of Ag or an Ag alloy.

5. The semiconductor light emitting device according to claim 3, wherein the Ag alloy contains at least one element selected from the group consisting of Bi, At, Pd, Cu, Pt, and Nd.

6. The semiconductor light emitting device according to claim 4, wherein the Ag alloy contains at least one element selected from the group consisting of Bi, At, Pd, Cu, Pt, and Nd.

7. The semiconductor light emitting device according to claim 1, wherein the barrier metal layer consists essentially of Ni, the reflection layer consists essentially of Ag or an Ag alloy, and the metal layer consists essentially of Ti and has a thickness in a range of from 0.35 nm to 200 nm.

8. The semiconductor light emitting device according to claim 1, wherein the barrier metal layer consists essentially of Ni, the reflection layer consists essentially of Ag or an Ag alloy, and the metal layer consists essentially of Pd and has a thickness in a range of from 1 nm to 1000 nm.

9. The semiconductor light emitting device according to claim 1, wherein the substrate has a surface defined by a bottom surface having a (100) plane and slanted side walls having a (111) plane, and the metal film is formed at least on the bottom surface and the slanted side walls.

10. An LED package, comprising:

a housing;

a lead frame provided along part of the housing and having a pair of leads; and

a semiconductor light emitting device comprising;

a substrate;

a metal film deposited on the substrate; and

a semiconductor light emitting element,

wherein the metal film comprises;

a barrier metal layer configured to prevent a predetermined material from being diffused into the substrate;

a metal layer consisting essentially of Ti or Pd; and

a reflection layer configured to reflect light emitted from the semiconductor light emitting element,

wherein the barrier metal layer, the metal layer, the reflection layer are deposited in this order from the substrate, and

wherein the semiconductor light emitting element is mounted on at least part of the lead frame and is electrically connected to the pair of leads.

11. The LED package according to claim 10, wherein the housing has a recess in which the semiconductor light emitting device is mounted, and a sealing resin is filled in the recess to seal the semiconductor light emitting device.

12. The LED package according to claim 10, wherein the sealing resin contains a wavelength converting material.

13. The LED package according to claim 10, wherein the barrier metal layer consists essentially of Ni.

14. The LED package according to claim 10, wherein the reflection layer consists essentially of Ag or an Ag alloy.

15. The LED package according to claim 13, wherein the reflection layer consists essentially of Ag or an Ag alloy.

16. The LED package according to claim 14, wherein the Ag alloy contains at least one element selected from the group consisting of Bi, At, Pd, Cu, Pt, and Nd.

17. The LED package according to claim 15, wherein the Ag alloy contains at least one element selected from the group consisting of Bi, At, Pd, Cu, Pt, and Nd.

18. The LED package according to claim 10, wherein the barrier metal layer consists essentially of Ni, the reflection layer consists essentially of Ag or an Ag alloy, and the metal layer consists essentially of Ti and has a thickness in a range of from 0.35 nm to 200 nm.

19. LED package according to claim 10, wherein the barrier metal layer consists essentially of Ni, the reflection layer consists essentially of Ag or an Ag alloy, and the metal layer consists essentially of Pd and has a thickness in a range of from 1 nm to 1000 nm.

20. LED package according to claim 10, wherein the substrate has a surface defined by a bottom surface having a (100) plane and slanted side walls having a (111) plane, and the metal film is formed at least on the bottom surface and the slanted side walls.

21. A method for fabricating a semiconductor light emitting device, comprising:

forming a barrier metal layer made of Ni on a silicon substrate;

forming a metal layer consisting essentially of Ti or Pd on the barrier metal layer;

forming a reflection layer made of Ag or an Ag alloy on the metal layer; and

electrically connecting a semiconductor light emitting element to the reflection layer.